Abstract
The physics and technology of nanowire (NW) photodetectors offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative indexes metamaterials-based devices. The successful integration of NW photodetectors on CMOS compatible substrates and various low-cost substrates would enhance and facilitate the adaptation of this technology module in the semiconductor foundries. In this chapter, we review the advantages of NW-based photodetectors, current device fabrication, and integration schemes, practical strategies, and recent device demonstrations and discuss the numerous technical design challenges. We present discussions on (1) low resistance contact and interfaces for NW integration, (2) high-speed design and impedance matching, (3) CMOS compatible mass-manufacturable device fabrication, and (4) progress in oxide NW-based photodetection. We also offer a brief outlook into the future perspectives on material growth and the future communication, consumer, and defense application opportunities for NW photodetectors.
| Original language | English |
|---|---|
| Title of host publication | Photodetectors |
| Subtitle of host publication | Materials, Devices and Applications |
| Publisher | Elsevier |
| Pages | 139-197 |
| Number of pages | 59 |
| ISBN (Electronic) | 9780081027950 |
| ISBN (Print) | 9780081028766 |
| DOIs | |
| Publication status | Published - 1 Jan 2023 |
Bibliographical note
Publisher Copyright:© 2023 Elsevier Ltd. All rights reserved.
Keywords
- nanophotonics
- nanowire integration, and multispectral photonics
- Nanowire photodetectors
- print transfer
