Nanoscale doping of InAs via sulfur monolayers

Keyphrases

• Sulfur 100%
• Nanoscale Doping 100%
• Device Fabrication 100%
• Transmission Electron Microscopy 50%
• Dopant Profile 50%
• Ultra-shallow Junction 50%
• Resistance Characteristics 50%
• Monolayer Doping 50%
• Planar Substrate 50%
• Post Deposition 50%
• Secondary Ion Mass Spectrometry 50%
• III-V Semiconductors 50%
• Defect Density 50%
• Sulfur Concentration 50%
• Active Sulfur 50%
• Nanoscale Devices 50%
• P-n Junction 50%
• Dopant 50%
• Sulfur Doping 50%
• Self-limiting 50%
• Doping Technique 50%
• Negative Differential Resistance 50%
• Cm(III) 50%

Material Science

• Device Fabrication 100%
• Monolayers 100%
• Doping (Additives) 100%
• Secondary Ion Mass Spectrometry 50%
• Transmission Electron Microscopy 50%
• III-V Semiconductor 50%
• Defect Density 50%