Nanoscale doping of InAs via sulfur monolayers

Johnny C. Ho; Alexandra C. Ford; Yu Lun Chueh; Paul W. Leu; Onur Ergen; Kuniharu Takei; Gregory Smith; Prashant Majhi; Joseph Bennett; Ali Javey

doi:10.1063/1.3205113

Nanoscale doping of InAs via sulfur monolayers

Johnny C. Ho, Alexandra C. Ford, Yu Lun Chueh, Paul W. Leu, Onur Ergen, Kuniharu Takei, Gregory Smith, Prashant Majhi, Joseph Bennett, Ali Javey^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

74 Citations (Scopus)

Abstract

One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of ∼3.5 nm /decade is observed without significant defect density. The n⁺/p ⁺ junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of ∼8× 10¹⁸ cm^-3.

Original language	English
Article number	072108
Journal	Applied Physics Letters
Volume	95
Issue number	7
DOIs	https://doi.org/10.1063/1.3205113
Publication status	Published - 2009
Externally published	Yes

Funding

This work was financially supported by NSF Grant No. 0826145, Intel Corporation, MARCO/MSD, SEMATECH, NSF COINS, and Berkeley Sensor and Actuator Center. J.C.H. acknowledges an Intel Graduate Fellowship.

Funders	Funder number
Intel Graduate Fellowship
SEMATECH
National Science Foundation	0826145
Intel Corporation
Meso Scale Diagnostics
Microelectronics Advanced Research Corporation

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abstract = "One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of ∼3.5 nm /decade is observed without significant defect density. The n+/p + junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of ∼8× 1018 cm-3.",

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AU - Ford, Alexandra C.

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AU - Takei, Kuniharu

AU - Smith, Gregory

AU - Majhi, Prashant

AU - Bennett, Joseph

AU - Javey, Ali

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AB - One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of ∼3.5 nm /decade is observed without significant defect density. The n+/p + junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of ∼8× 1018 cm-3.

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Nanoscale doping of InAs via sulfur monolayers

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