Abstract
We propose Mo2TiC2O2-based quantum transport device as a pressure sensor. Using non-equilibrium Green's function technique, we have investigated the current–voltage characteristics of Mo2TiC2O2-based nanodevice under pressure. In a compressed double MXene, the electronic states originating from the two different transition metals are shifted up unequally. Thus, the character of VBM changes drastically after a critical compression. The proposed nanodevice has moderate pressure sensitivity. While the macroscopic Mo2TiC2O2 sensor is usable only for excess pressure detection, the nanodevice can act as a pressure sensor in a wider pressure range. Given the excellent stability of MXenes, Mo2TiC2O2 is a promising sensor material. The same mechanism of pressure-induced unequal level-shifting could be exploited also in other double MXenes that will be synthesized.
Original language | English |
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Article number | 113762 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 116 |
DOIs | |
Publication status | Published - Feb 2020 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2019 Elsevier B.V.
Keywords
- MXene
- NEGF
- NEMS pressure sensor