Abstract
Semiconductor nanopillar arrays with radially doped junctions have been widely proposed as an attractive device architecture for cost effective and high efficiency solar cells. A challenge in the fabrication of three-dimensional nanopillar devices is the need for highly abrupt and conformal junctions along the radial axes. Here, a sulfur monolayer doping scheme is implemented to achieve conformal ultrashallow junctions with sub-10 nm depths and a high electrically active dopant concentration of 1019 - 1020 cm-3 in arrays of InP nanopillars. The enabled solar cells exhibit a respectable conversion efficiency of 8.1% and a short circuit current density of 25 mA/ cm3. The work demonstrates the utility of well-established surface chemistry for fabrication of nonplanar junctions for complex devices.
Original language | English |
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Article number | 203101 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 20 |
DOIs | |
Publication status | Published - 16 May 2011 |
Externally published | Yes |
Funding
This work was supported by Mohr Davidow Ventures and NSF (Grant No. 0826145). The S-MLD process development was supported by a LDRD from LBNL. A.J. acknowledges a Sloan research fellowship and support from the World Class University program at Sunchon National University. J.M. acknowledges financial support from Korea Institute for Advancement of Technology (KIAT). R.K. acknowledges an NSF Graduate Fellowship.
Funders | Funder number |
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Mohr Davidow Ventures | |
National Science Foundation | 0826145 |
Lawrence Berkeley National Laboratory | |
Laboratory Directed Research and Development | |
Sunchon National University | |
Korea Institute for Advancement of Technology |