Molecular monolayers for conformal, nanoscale doping of InP nanopillar photovoltaics

Kee Cho*, Daniel J. Ruebusch, Min Hyung Lee, Jae Hyun Moon, Alexandra C. Ford, Rehan Kapadia, Kuniharu Takei, Onur Ergen, Ali Javey

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)

Abstract

Semiconductor nanopillar arrays with radially doped junctions have been widely proposed as an attractive device architecture for cost effective and high efficiency solar cells. A challenge in the fabrication of three-dimensional nanopillar devices is the need for highly abrupt and conformal junctions along the radial axes. Here, a sulfur monolayer doping scheme is implemented to achieve conformal ultrashallow junctions with sub-10 nm depths and a high electrically active dopant concentration of 1019 - 1020 cm-3 in arrays of InP nanopillars. The enabled solar cells exhibit a respectable conversion efficiency of 8.1% and a short circuit current density of 25 mA/ cm3. The work demonstrates the utility of well-established surface chemistry for fabrication of nonplanar junctions for complex devices.

Original languageEnglish
Article number203101
JournalApplied Physics Letters
Volume98
Issue number20
DOIs
Publication statusPublished - 16 May 2011
Externally publishedYes

Funding

This work was supported by Mohr Davidow Ventures and NSF (Grant No. 0826145). The S-MLD process development was supported by a LDRD from LBNL. A.J. acknowledges a Sloan research fellowship and support from the World Class University program at Sunchon National University. J.M. acknowledges financial support from Korea Institute for Advancement of Technology (KIAT). R.K. acknowledges an NSF Graduate Fellowship.

FundersFunder number
Mohr Davidow Ventures
National Science Foundation0826145
Lawrence Berkeley National Laboratory
Laboratory Directed Research and Development
Sunchon National University
Korea Institute for Advancement of Technology

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