Modeling the Avalanche Breakdown of the FMMT417 NPN BJT in the TINA Environment

Mert Yetkin; Mustafa Berke Yelten

doi:10.1109/SMACD58065.2023.10192129

Modeling the Avalanche Breakdown of the FMMT417 NPN BJT in the TINA Environment

Mert Yetkin, Mustafa Berke Yelten

Department of Electronics and Communication Engineering

ASELSAN Inc.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

In this paper, the avalanche breakdown observed in avalanche-type bipolar junction transistors is modeled, where a macromodel proposed earlier in the literature is extended to become compatible with practical circuit simulators. Moreover, contributions to the macromodel are introduced and implemented. The resulting model is used in circuit simulations, and the outcomes are compared with the experimental results that depict the accuracy of the proposed approach.

Original language	English
Title of host publication	Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332650
DOIs	https://doi.org/10.1109/SMACD58065.2023.10192129
Publication status	Published - 2023
Event	19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023 - Funchal, Portugal Duration: 3 Jul 2023 → 5 Jul 2023

Publication series

Name	Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023

Conference

Conference	19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023
Country/Territory	Portugal
City	Funchal
Period	3/07/23 → 5/07/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

avalanche breakdown
Avalanche transistors
bipolar junction transistor
breakdown model
Marx generator

Access to Document

10.1109/SMACD58065.2023.10192129

Cite this

Yetkin, M., & Yelten, M. B. (2023). Modeling the Avalanche Breakdown of the FMMT417 NPN BJT in the TINA Environment. In Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023 (Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMACD58065.2023.10192129

Yetkin, Mert ; Yelten, Mustafa Berke. / Modeling the Avalanche Breakdown of the FMMT417 NPN BJT in the TINA Environment. Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023).

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abstract = "In this paper, the avalanche breakdown observed in avalanche-type bipolar junction transistors is modeled, where a macromodel proposed earlier in the literature is extended to become compatible with practical circuit simulators. Moreover, contributions to the macromodel are introduced and implemented. The resulting model is used in circuit simulations, and the outcomes are compared with the experimental results that depict the accuracy of the proposed approach.",

keywords = "avalanche breakdown, Avalanche transistors, bipolar junction transistor, breakdown model, Marx generator",

author = "Mert Yetkin and Yelten, {Mustafa Berke}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023 ; Conference date: 03-07-2023 Through 05-07-2023",

year = "2023",

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series = "Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023",

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Yetkin, M & Yelten, MB 2023, Modeling the Avalanche Breakdown of the FMMT417 NPN BJT in the TINA Environment. in Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023. Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023, Institute of Electrical and Electronics Engineers Inc., 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023, Funchal, Portugal, 3/07/23. https://doi.org/10.1109/SMACD58065.2023.10192129

Modeling the Avalanche Breakdown of the FMMT417 NPN BJT in the TINA Environment. / Yetkin, Mert; Yelten, Mustafa Berke.
Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yelten, Mustafa Berke

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N2 - In this paper, the avalanche breakdown observed in avalanche-type bipolar junction transistors is modeled, where a macromodel proposed earlier in the literature is extended to become compatible with practical circuit simulators. Moreover, contributions to the macromodel are introduced and implemented. The resulting model is used in circuit simulations, and the outcomes are compared with the experimental results that depict the accuracy of the proposed approach.

AB - In this paper, the avalanche breakdown observed in avalanche-type bipolar junction transistors is modeled, where a macromodel proposed earlier in the literature is extended to become compatible with practical circuit simulators. Moreover, contributions to the macromodel are introduced and implemented. The resulting model is used in circuit simulations, and the outcomes are compared with the experimental results that depict the accuracy of the proposed approach.

KW - avalanche breakdown

KW - Avalanche transistors

KW - bipolar junction transistor

KW - breakdown model

KW - Marx generator

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M3 - Conference contribution

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T3 - Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023

BT - Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023

PB - Institute of Electrical and Electronics Engineers Inc.

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Yetkin M, Yelten MB. Modeling the Avalanche Breakdown of the FMMT417 NPN BJT in the TINA Environment. In Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023). doi: 10.1109/SMACD58065.2023.10192129

Modeling the Avalanche Breakdown of the FMMT417 NPN BJT in the TINA Environment

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Keywords

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