Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

Onur Ergen; Ashley Gibb; Oscar Vazquez-Mena; William Raymond Regan; Alex Zettl

doi:10.1063/1.4914181

Metal insulator semiconductor solar cell devices based on a Cu₂O substrate utilizing h-BN as an insulating and passivating layer

Onur Ergen, Ashley Gibb, Oscar Vazquez-Mena, William Raymond Regan, Alex Zettl

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We demonstrate cuprous oxide (Cu₂O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu₂O layer. The devices are the most efficient of any Cu₂O based MIS-Schottky solar cells reported to date.

Original language	English
Article number	103904
Journal	Applied Physics Letters
Volume	106
Issue number	10
DOIs	https://doi.org/10.1063/1.4914181
Publication status	Published - 9 Mar 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

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Access to Document

10.1063/1.4914181

Cite this

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abstract = "We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3\%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.",

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AU - Regan, William Raymond

AU - Zettl, Alex

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