Metal insulator semiconductor solar cell devices based on a Cu2O substrate utilizing h-BN as an insulating and passivating layer

Onur Ergen, Ashley Gibb, Oscar Vazquez-Mena, William Raymond Regan, Alex Zettl

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.

Original languageEnglish
Article number103904
JournalApplied Physics Letters
Volume106
Issue number10
DOIs
Publication statusPublished - 9 Mar 2015
Externally publishedYes

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© 2015 AIP Publishing LLC.

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