Abstract
We demonstrate cuprous oxide (Cu2O) based metal insulator semiconductor Schottky (MIS-Schottky) solar cells with efficiency exceeding 3%. A unique direct growth technique is employed in the fabrication, and hexagonal boron nitride (h-BN) serves simultaneously as a passivation and insulation layer on the active Cu2O layer. The devices are the most efficient of any Cu2O based MIS-Schottky solar cells reported to date.
Original language | English |
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Article number | 103904 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 10 |
DOIs | |
Publication status | Published - 9 Mar 2015 |
Externally published | Yes |
Bibliographical note
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