Magnetic Properties of Silicon Doped with Impurity Atoms of Europium

N. F. Zikrillaev, G. H. Mavlonov, L. Trabzon, S. B. Isamov, Y. A. Abduganiev, Sh N. Ibodullaev, G. A. Kushiev

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The electrical parameters of silicon samples diffusion doped by europium impurity atoms were studied by Van der Pauw (VDP) method. The experimental results were examined, particularly the surface morphology using an Atomic Force Microscope (AFM). The lattice constant of the materials was calculated with the help of Bragg-Brentano's law using X-ray diffraction on the XRD pattern of the Si<P,Eu> sample.

Original languageEnglish
Article number06001
JournalJournal of Nano- and Electronic Physics
Volume15
Issue number6
DOIs
Publication statusPublished - 2023

Bibliographical note

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© 2023 Sumy State University. All Rights Reserved.

Keywords

  • AFM
  • Bragg angle
  • Bragg-Brentano
  • Lattice constant
  • Miller index
  • X-rays
  • XRD

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