Abstract
The electrical parameters of silicon samples diffusion doped by europium impurity atoms were studied by Van der Pauw (VDP) method. The experimental results were examined, particularly the surface morphology using an Atomic Force Microscope (AFM). The lattice constant of the materials was calculated with the help of Bragg-Brentano's law using X-ray diffraction on the XRD pattern of the Si<P,Eu> sample.
Original language | English |
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Article number | 06001 |
Journal | Journal of Nano- and Electronic Physics |
Volume | 15 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2023 |
Bibliographical note
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Keywords
- AFM
- Bragg angle
- Bragg-Brentano
- Lattice constant
- Miller index
- X-rays
- XRD