Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

D. Demiroʇlu; B. Tatar; K. Kazmanli; M. Urgen

doi:10.1063/1.4849249

Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

D. Demiroʇlu
, B. Tatar
, K. Kazmanli
, M. Urgen

Department of Metallurgical and Materials Engineering

Istanbul Technical University
Namik Kemal University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ _B , diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

Original language	English
Title of host publication	3rd International Advances in Applied Physics and Materials Science Congress
Editors	Asli Sonmez, Zehra Banu Bahsi, Ahmet Yavuz Oral
Publisher	American Institute of Physics Inc.
Pages	158-161
Number of pages	4
ISBN (Electronic)	9780735411975
DOIs	https://doi.org/10.1063/1.4849249
Publication status	Published - 2013
Event	3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 - Antalya, Turkey Duration: 24 Apr 2013 → 28 Apr 2013

Publication series

Name	AIP Conference Proceedings
Volume	1569
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013
Country/Territory	Turkey
City	Antalya
Period	24/04/13 → 28/04/13

Bibliographical note

Publisher Copyright:
© 2013 AIP Publishing LLC.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Amorphous silicon
e-beam evaporation technique
electrical properties

Access to Document

10.1063/1.4849249

Cite this

Demiroʇlu, D., Tatar, B., Kazmanli, K., & Urgen, M. (2013). Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. In A. Sonmez, Z. B. Bahsi, & A. Y. Oral (Eds.), 3rd International Advances in Applied Physics and Materials Science Congress (pp. 158-161). (AIP Conference Proceedings; Vol. 1569). American Institute of Physics Inc.. https://doi.org/10.1063/1.4849249

Demiroʇlu, D. ; Tatar, B. ; Kazmanli, K. et al. / Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. 3rd International Advances in Applied Physics and Materials Science Congress. editor / Asli Sonmez ; Zehra Banu Bahsi ; Ahmet Yavuz Oral. American Institute of Physics Inc., 2013. pp. 158-161 (AIP Conference Proceedings).

@inproceedings{7bfb8ce44085459abe868609156155f2,

title = "Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique",

abstract = " Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ B , diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.",

keywords = "Amorphous silicon, e-beam evaporation technique, electrical properties",

author = "D. Demiroʇlu and B. Tatar and K. Kazmanli and M. Urgen",

note = "Publisher Copyright: {\textcopyright} 2013 AIP Publishing LLC.; 3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 ; Conference date: 24-04-2013 Through 28-04-2013",

year = "2013",

doi = "10.1063/1.4849249",

language = "English",

series = "AIP Conference Proceedings",

publisher = "American Institute of Physics Inc.",

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editor = "Asli Sonmez and Bahsi, \{Zehra Banu\} and Oral, \{Ahmet Yavuz\}",

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Demiroʇlu, D, Tatar, B, Kazmanli, K & Urgen, M 2013, Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. in A Sonmez, ZB Bahsi & AY Oral (eds), 3rd International Advances in Applied Physics and Materials Science Congress. AIP Conference Proceedings, vol. 1569, American Institute of Physics Inc., pp. 158-161, 3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013, Antalya, Turkey, 24/04/13. https://doi.org/10.1063/1.4849249

Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. / Demiroʇlu, D.; Tatar, B.; Kazmanli, K. et al.
3rd International Advances in Applied Physics and Materials Science Congress. ed. / Asli Sonmez; Zehra Banu Bahsi; Ahmet Yavuz Oral. American Institute of Physics Inc., 2013. p. 158-161 (AIP Conference Proceedings; Vol. 1569).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

AU - Demiroʇlu, D.

AU - Tatar, B.

AU - Kazmanli, K.

AU - Urgen, M.

PY - 2013

Y1 - 2013

N2 - Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ B , diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

AB - Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ B , diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.

KW - Amorphous silicon

KW - e-beam evaporation technique

KW - electrical properties

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DO - 10.1063/1.4849249

M3 - Conference contribution

AN - SCOPUS:84942855737

T3 - AIP Conference Proceedings

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EP - 161

BT - 3rd International Advances in Applied Physics and Materials Science Congress

A2 - Sonmez, Asli

A2 - Bahsi, Zehra Banu

A2 - Oral, Ahmet Yavuz

PB - American Institute of Physics Inc.

T2 - 3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013

Y2 - 24 April 2013 through 28 April 2013

ER -

Demiroʇlu D, Tatar B, Kazmanli K, Urgen M. Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique. In Sonmez A, Bahsi ZB, Oral AY, editors, 3rd International Advances in Applied Physics and Materials Science Congress. American Institute of Physics Inc. 2013. p. 158-161. (AIP Conference Proceedings). doi: 10.1063/1.4849249

Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

Abstract

Publication series

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Bibliographical note

UN SDGs

Keywords

Access to Document

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