Abstract
Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ B , diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.
| Original language | English |
|---|---|
| Title of host publication | 3rd International Advances in Applied Physics and Materials Science Congress |
| Editors | Asli Sonmez, Zehra Banu Bahsi, Ahmet Yavuz Oral |
| Publisher | American Institute of Physics Inc. |
| Pages | 158-161 |
| Number of pages | 4 |
| ISBN (Electronic) | 9780735411975 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | 3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 - Antalya, Turkey Duration: 24 Apr 2013 → 28 Apr 2013 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1569 |
| ISSN (Print) | 0094-243X |
| ISSN (Electronic) | 1551-7616 |
Conference
| Conference | 3rd International Advances in Applied Physics and Materials Science Congress, APMAS 2013 |
|---|---|
| Country/Territory | Turkey |
| City | Antalya |
| Period | 24/04/13 → 28/04/13 |
Bibliographical note
Publisher Copyright:© 2013 AIP Publishing LLC.
Keywords
- Amorphous silicon
- e-beam evaporation technique
- electrical properties
