Investigation of physical properties of quaternary AgGa o.5Ino.5Te2 thin films deposited by thermal evaporation

H. Karaagac, M. Parlak*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The aim of this study is to understand the structural, optical and photo-electrical properties of the quaternary chalcogenide AgGa 0.5In0.5Te2 thin films deposited onto the glass substrates by thermal evaporation of the single crystalline powder. Energy dispersive X-ray analysis (EDXA) showed remarkable change in atomic percentage of the constituent elements after annealing. The X-ray diffraction (XRD) of the films below the annealing temperature of 300°C indicated the polycrystalline structure with co-existence of AgGaTe2 and AgGa0.5In 0.5Te2 phases. However, the single phase of AgGa 0.5In0.5Te2 chalcopyrite structure was obtained at the annealing of 300 °C. The band gap values were calculated in between 1.05 and 1.37 eV depending on annealing temperature. The temperature dependent photoconductivity was measured under different illumination intensity. The nature of existing trap levels were studied by measuring the variation of photocurrent as a function of illumination intensity. The analysis showed that AgGa0.5In0.5Te2 thin film changes its behavior from the sublinear to supralinear photoconductivity after annealing.

Original languageEnglish
Pages (from-to)468-473
Number of pages6
JournalJournal of Alloys and Compounds
Issue number2
Publication statusPublished - 23 Jul 2010
Externally publishedYes


This work was supported by Turkish Scientific and Research Council (TUBITAK) under Grant No. 108T019 .

FundersFunder number
Turkish Scientific and Research Council


    • Crystal growth
    • Photoconduction
    • Solar cells
    • Vacuum deposition
    • X-ray diffraction


    Dive into the research topics of 'Investigation of physical properties of quaternary AgGa o.5Ino.5Te2 thin films deposited by thermal evaporation'. Together they form a unique fingerprint.

    Cite this