Inorganic-organic photodiodes based on polyaniline doped boric acid and polyaniline doped boric acid:nickel(II) phthalocyanine composite

Fahrettin Yakuphanoglu; Mehmet Kandaz; B. Filiz Senkal

doi:10.1016/j.sna.2009.05.008

Inorganic-organic photodiodes based on polyaniline doped boric acid and polyaniline doped boric acid:nickel(II) phthalocyanine composite

Fahrettin Yakuphanoglu^*, Mehmet Kandaz, B. Filiz Senkal

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

The electronic and photovoltaic properties of hybrid organic photodiodes based on n-Si/boric acid doped polyaniline (PANIB) and n-Si/2,3,7,8,12,13,17,18-octakis(2′-aminophenylsulfanyl)-substituted-nickel(II) phthalocyanine:boric acid doped polyaniline (PANIB-PC) composite have been investigated. The current-voltage characteristics of the n-Si/PANIB and n-Si/PANIB-PC diodes were analyzed under dark and illumination conditions. The open circuit voltage, V_oc and short circuit current, I_sc values for the n-Si/PANIB and n-Si/PANIB-PC diodes under 105 mW/cm² were respectively found to be 0.280 V, 6.19 nA and 0.304 V, 0.091 nA. The fabricated inorganic/organic devices can be used as an optical sensor for optoelectronic applications.

Original language	English
Pages (from-to)	191-196
Number of pages	6
Journal	Sensors and Actuators A: Physical
Volume	153
Issue number	2
DOIs	https://doi.org/10.1016/j.sna.2009.05.008
Publication status	Published - 3 Aug 2009

Funding

This work was supported by the National Boron Research Institute (BOREN) (Project Number: BOREN-2006-26-Ç25-19). The authors wish to thank BOREN.

Funders	Funder number
Ulusal Bor Araştırma Enstitüsü	BOREN-2006-26-Ç25-19

Keywords

Boric acid doped polyaniline
Organic semiconductor
Photodiode

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.sna.2009.05.008

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title = "Inorganic-organic photodiodes based on polyaniline doped boric acid and polyaniline doped boric acid:nickel(II) phthalocyanine composite",

abstract = "The electronic and photovoltaic properties of hybrid organic photodiodes based on n-Si/boric acid doped polyaniline (PANIB) and n-Si/2,3,7,8,12,13,17,18-octakis(2′-aminophenylsulfanyl)-substituted-nickel(II) phthalocyanine:boric acid doped polyaniline (PANIB-PC) composite have been investigated. The current-voltage characteristics of the n-Si/PANIB and n-Si/PANIB-PC diodes were analyzed under dark and illumination conditions. The open circuit voltage, Voc and short circuit current, Isc values for the n-Si/PANIB and n-Si/PANIB-PC diodes under 105 mW/cm2 were respectively found to be 0.280 V, 6.19 nA and 0.304 V, 0.091 nA. The fabricated inorganic/organic devices can be used as an optical sensor for optoelectronic applications.",

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author = "Fahrettin Yakuphanoglu and Mehmet Kandaz and Senkal, {B. Filiz}",

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T1 - Inorganic-organic photodiodes based on polyaniline doped boric acid and polyaniline doped boric acid:nickel(II) phthalocyanine composite

AU - Yakuphanoglu, Fahrettin

AU - Kandaz, Mehmet

AU - Senkal, B. Filiz

PY - 2009/8/3

Y1 - 2009/8/3

N2 - The electronic and photovoltaic properties of hybrid organic photodiodes based on n-Si/boric acid doped polyaniline (PANIB) and n-Si/2,3,7,8,12,13,17,18-octakis(2′-aminophenylsulfanyl)-substituted-nickel(II) phthalocyanine:boric acid doped polyaniline (PANIB-PC) composite have been investigated. The current-voltage characteristics of the n-Si/PANIB and n-Si/PANIB-PC diodes were analyzed under dark and illumination conditions. The open circuit voltage, Voc and short circuit current, Isc values for the n-Si/PANIB and n-Si/PANIB-PC diodes under 105 mW/cm2 were respectively found to be 0.280 V, 6.19 nA and 0.304 V, 0.091 nA. The fabricated inorganic/organic devices can be used as an optical sensor for optoelectronic applications.

AB - The electronic and photovoltaic properties of hybrid organic photodiodes based on n-Si/boric acid doped polyaniline (PANIB) and n-Si/2,3,7,8,12,13,17,18-octakis(2′-aminophenylsulfanyl)-substituted-nickel(II) phthalocyanine:boric acid doped polyaniline (PANIB-PC) composite have been investigated. The current-voltage characteristics of the n-Si/PANIB and n-Si/PANIB-PC diodes were analyzed under dark and illumination conditions. The open circuit voltage, Voc and short circuit current, Isc values for the n-Si/PANIB and n-Si/PANIB-PC diodes under 105 mW/cm2 were respectively found to be 0.280 V, 6.19 nA and 0.304 V, 0.091 nA. The fabricated inorganic/organic devices can be used as an optical sensor for optoelectronic applications.

KW - Boric acid doped polyaniline

KW - Organic semiconductor

KW - Photodiode

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JO - Sensors and Actuators A: Physical

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Inorganic-organic photodiodes based on polyaniline doped boric acid and polyaniline doped boric acid:nickel(II) phthalocyanine composite

Abstract

Funding

Keywords

UN SDGs

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