Abstract
This paper presents a study of Al-doped ZnO films deposited at room temperature by a cost-effective sol-gel dip-coating technique. The influence of Al concentration on crystallinity, electrical and optical properties of films annealed in nitrogen and oxygen atmosphere has been studied. The resistivity has been decreased from 1.1–1.6 × 10−4 Ω.cm to 0.73–0.93 × 10−4 Ω.cm with the increase of Al concentration from 0,8 to 1,2 at. %, respectively. Transmission spectrum displays that optical transmittance has been displayed between 85% and 90% by increasing Al concentration.
| Original language | English |
|---|---|
| Article number | 126641 |
| Journal | Materials Letters |
| Volume | 258 |
| DOIs | |
| Publication status | Published - 1 Jan 2020 |
Bibliographical note
Publisher Copyright:© 2019 Elsevier B.V.
Funding
Authors thank to Prof. Dr. Huseyin CIMENOGLU for his support about fabrication process at laboratory in Materials Engineering, ITU, Turkey. This work was financially supported by ITU Scientific Research Projects Foundation, BAP, Turkey, Project No: 41978 for Ph.D. Thesis. Authors thank to Prof. Dr. Huseyin CIMENOGLU for his support about fabrication process at laboratory in Materials Engineering, ITU, Turkey . This work was financially supported by ITU Scientific Research Projects Foundation, BAP, Turkey, Project No: 41978 for Ph.D. Thesis.
| Funders | Funder number |
|---|---|
| ITU Scientific Research Projects Foundation | 41978 |
| British Association for Psychopharmacology |
Keywords
- Optoelectronic
- Sol-gel
- Structural characterization
- Thin films