Influence of strain on the diffusion of Si dimers on Si(001)

E. Zoethout; O. Gürlü; H. J.W. Zandvliet; Bene Poelsema

doi:10.1016/S0039-6028(00)00338-1

Influence of strain on the diffusion of Si dimers on Si(001)

E. Zoethout^*, O. Gürlü, H. J.W. Zandvliet, Bene Poelsema

^*Corresponding author for this work

University of Twente

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the substrate dimer rows is significantly enhanced. The insensitivity of the along row diffusion rate for tensile strain is attributed to the presence of a dissociative intermediate state of the ad-dimer during diffusion rather than diffusion as a solid unit.

Original language	English
Pages (from-to)	247-252
Number of pages	6
Journal	Surface Science
Volume	452
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(00)00338-1
Publication status	Published - 1 May 2000
Externally published	Yes

Funding

This work is supported by the Netherlands Organization for Scientific Research (NWO).

Funders	Funder number
Netherlands Organization for Scientific Research
Nederlandse Organisatie voor Wetenschappelijk Onderzoek

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10.1016/S0039-6028(00)00338-1

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abstract = "The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the substrate dimer rows is significantly enhanced. The insensitivity of the along row diffusion rate for tensile strain is attributed to the presence of a dissociative intermediate state of the ad-dimer during diffusion rather than diffusion as a solid unit.",

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AU - Zoethout, E.

AU - Gürlü, O.

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AU - Poelsema, Bene

PY - 2000/5/1

Y1 - 2000/5/1

N2 - The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the substrate dimer rows is significantly enhanced. The insensitivity of the along row diffusion rate for tensile strain is attributed to the presence of a dissociative intermediate state of the ad-dimer during diffusion rather than diffusion as a solid unit.

AB - The influence of lattice mismatch-induced tensile strain on the diffusion of Si dimers on Si(001) has been studied. The rate of surface diffusion of a Si dimer along the substrate dimer rows is relatively insensitive to tensile strain, whereas the rate of diffusion for a Si dimer across the substrate dimer rows is significantly enhanced. The insensitivity of the along row diffusion rate for tensile strain is attributed to the presence of a dissociative intermediate state of the ad-dimer during diffusion rather than diffusion as a solid unit.

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DO - 10.1016/S0039-6028(00)00338-1

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ER -

Influence of strain on the diffusion of Si dimers on Si(001)

Abstract

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