Improving threshold voltage and on/off current ratio of single-walled carbon nanotube field-effect transistor by post-sonication treatments

Fereshteh Ordokhani*, F. Beyza Yedikardes, Ece Kurt, Nihat Akkan, Nilgun Karatepe, Esra Zayim, Mustafa Altun

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In the process of solution-based fabrication of Single-walled Carbon Nanotube Field Effect Transistor (SWCNT FET), the quality of SWCNTs network plays an important role. SWCNTs networks have disorders and defects because of chirality mismatches that cause the weaker tunneling between SWCNTs, hence suppressing conductance and the electrical performance of the device. In this paper, we present a study on the impact of SWCNTs network structure, which were formed in the channel on the prefabricated test chips, on electrical characteristic parameters like threshold voltage (VT) and on/off current ratio (ION/IOFF). Also, we propose a simple and low-cost post-process to decrease the VT and enhance ION/IOFF of SWCNT FET comparable to the reasonably good performances of the same devices to the date. Post-sonication treatments of the devices in the deionized water and the isopropyl alcohol not only removed the residual impurities remained between individual SWCNTs and around their surface and substrate, but also decreased the structural defects of their network (based on the provided Raman spectroscopy results). This improves ION/IOFF up to 153 times and shifts VT in the negative direction up to almost 0 V. The results indicate the importance of the improvement of SWCNTs network structure in enhancing SWCNT FET electrical performance.

Original languageEnglish
Article number138677
JournalThin Solid Films
Volume727
DOIs
Publication statusPublished - 1 Jun 2021

Bibliographical note

Publisher Copyright:
© 2021 Elsevier B.V.

Funding

This research was funded by The Scientific and Technological Research Council of Turkey (TUBITAK 1001 project) Nr. 116E250 .

FundersFunder number
TUBITAK116E250
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu

    Keywords

    • Field effect transistors
    • Single-walled carbon nanotube
    • Sonication
    • Spin coating
    • Thin-film

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