Abstract
This paper discusses the dielectric breakdown reliability of a two-stage operational amplifier across four short-channel device technologies. For a long time, time dependent dielectric breakdown (TDDB) impact was only confined to digital circuits as the electric field across the gate oxide is relatively large despite being applied in accordance with the activity factor. However, in analog circuits, electric field is generally smaller, though it is constant. One particular aspect that was of interest is the change in TDDB reliability of analog circuits when the device technology descends into deep nanoscale regime. This paper shows that the amplifier reliability becomes mostly enhanced as the transistor technology scales down from 90nm to 32 nm.
| Original language | English |
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| Title of host publication | 2017 10th International Conference on Electrical and Electronics Engineering, ELECO 2017 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 476-480 |
| Number of pages | 5 |
| ISBN (Electronic) | 9786050107371 |
| Publication status | Published - 2 Jul 2017 |
| Event | 10th International Conference on Electrical and Electronics Engineering, ELECO 2017 - Bursa, Turkey Duration: 29 Nov 2017 → 2 Dec 2017 |
Publication series
| Name | 2017 10th International Conference on Electrical and Electronics Engineering, ELECO 2017 |
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| Volume | 2018-January |
Conference
| Conference | 10th International Conference on Electrical and Electronics Engineering, ELECO 2017 |
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| Country/Territory | Turkey |
| City | Bursa |
| Period | 29/11/17 → 2/12/17 |
Bibliographical note
Publisher Copyright:© 2017 EMO (Turkish Chamber of Electrical Enginners).