Abstract
This tutorial presents the holistic modeling concept in the context of metal-oxide-semiconductor field-effect-transistors (MOSFETs). First, the standard MOSFET modeling approaches will be comparatively discussed. Subsequently, several factors impacting the operation of MOSFETs will be explained in terms of their physical origins and their modeling, as already undertaken in the literature. These factors include process variations, time-based degradation, as well as extreme environmental conditions, such as low or high temperatures and ionizing radiation. Subsequently, the need for considering these phenomena in joint configurations is demonstrated through experimental data. Finally, an implementation strategy for holistic modeling will be proposed by introducing 'extreme corners', which represent the combinations of conventional process corners with the mentioned factors at various values of interest.
Original language | English |
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Pages (from-to) | 2635-2640 |
Number of pages | 6 |
Journal | IEEE Transactions on Circuits and Systems II: Express Briefs |
Volume | 69 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Jun 2022 |
Bibliographical note
Publisher Copyright:© 2004-2012 IEEE.
Keywords
- cryogenic temperatures
- Holistic modeling
- integrated circuits
- process variations
- total ionizing radiation
- transistor aging
- transistor modeling