High-Performance Wideband 0.25 μm GaAs pHEMT 6-Bit Digital Phase Shifter Design for C-Band Phased Array Applications

Orkun Altay Genc; Adnan Gundel; Mustafa Berke Yelten

doi:10.1109/SMACD58065.2023.10192146

High-Performance Wideband 0.25 μm GaAs pHEMT 6-Bit Digital Phase Shifter Design for C-Band Phased Array Applications

Orkun Altay Genc, Adnan Gundel, Mustafa Berke Yelten

Department of Electronics and Communication Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

In this paper, a 6-bit digital phase shifter design is introduced for C-band phased array applications, which presents a high performance in a wide bandwidth between 4 GHz and 6 GHz. The design is performed using the process design kit for 0.25 μm Gallium Arsenide pHEMT applications by WinSemi foundry. For each bit, the optimal design topology is selected and revised with enhancements so that the phase shifter attains a phase shift response, high input/output return loss, and low insertion loss characteristics in a comparatively compact form. The step size for the digital phase shifter is 5.625° with a phase error of 2.8125° in each bit design, tracking the whole 360°. The overall input and output return losses are greater than 10 dB, and the insertion loss of the component is lower than 5.8 dB over the 4-6 GHz bandwidth. This successful performance is achieved within a chip area of only 2200 μm to 2200 μm. Embedded switch all-pass networks and switched high-pass/low-pass network topologies are employed and controlled in parallel within the design. Each bit topology, along with the element values, is optimized and validated for the best performance.

Original language	English
Title of host publication	Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332650
DOIs	https://doi.org/10.1109/SMACD58065.2023.10192146
Publication status	Published - 2023
Event	19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023 - Funchal, Portugal Duration: 3 Jul 2023 → 5 Jul 2023

Publication series

Name	Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023

Conference

Conference	19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023
Country/Territory	Portugal
City	Funchal
Period	3/07/23 → 5/07/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

0.25 μm GaAs pHEMT
6-bit
all-pass network
c-band
digital phase shifter
phased-array
switched high-pass/low-pass network

Access to Document

10.1109/SMACD58065.2023.10192146

Cite this

Genc, O. A., Gundel, A., & Yelten, M. B. (2023). High-Performance Wideband 0.25 μm GaAs pHEMT 6-Bit Digital Phase Shifter Design for C-Band Phased Array Applications. In Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023 (Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMACD58065.2023.10192146

Genc, Orkun Altay ; Gundel, Adnan ; Yelten, Mustafa Berke. / High-Performance Wideband 0.25 μm GaAs pHEMT 6-Bit Digital Phase Shifter Design for C-Band Phased Array Applications. Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023).

@inproceedings{9f7b2e9784474de4a506f7f552f4ad02,

title = "High-Performance Wideband 0.25 μm GaAs pHEMT 6-Bit Digital Phase Shifter Design for C-Band Phased Array Applications",

abstract = "In this paper, a 6-bit digital phase shifter design is introduced for C-band phased array applications, which presents a high performance in a wide bandwidth between 4 GHz and 6 GHz. The design is performed using the process design kit for 0.25 μm Gallium Arsenide pHEMT applications by WinSemi foundry. For each bit, the optimal design topology is selected and revised with enhancements so that the phase shifter attains a phase shift response, high input/output return loss, and low insertion loss characteristics in a comparatively compact form. The step size for the digital phase shifter is 5.625° with a phase error of 2.8125° in each bit design, tracking the whole 360°. The overall input and output return losses are greater than 10 dB, and the insertion loss of the component is lower than 5.8 dB over the 4-6 GHz bandwidth. This successful performance is achieved within a chip area of only 2200 μm to 2200 μm. Embedded switch all-pass networks and switched high-pass/low-pass network topologies are employed and controlled in parallel within the design. Each bit topology, along with the element values, is optimized and validated for the best performance.",

keywords = "0.25 μm GaAs pHEMT, 6-bit, all-pass network, c-band, digital phase shifter, phased-array, switched high-pass/low-pass network",

author = "Genc, {Orkun Altay} and Adnan Gundel and Yelten, {Mustafa Berke}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023 ; Conference date: 03-07-2023 Through 05-07-2023",

year = "2023",

doi = "10.1109/SMACD58065.2023.10192146",

language = "English",

series = "Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023",

address = "United States",

}

Genc, OA, Gundel, A & Yelten, MB 2023, High-Performance Wideband 0.25 μm GaAs pHEMT 6-Bit Digital Phase Shifter Design for C-Band Phased Array Applications. in Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023. Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023, Institute of Electrical and Electronics Engineers Inc., 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023, Funchal, Portugal, 3/07/23. https://doi.org/10.1109/SMACD58065.2023.10192146

High-Performance Wideband 0.25 μm GaAs pHEMT 6-Bit Digital Phase Shifter Design for C-Band Phased Array Applications. / Genc, Orkun Altay; Gundel, Adnan; Yelten, Mustafa Berke.
Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-Performance Wideband 0.25 μm GaAs pHEMT 6-Bit Digital Phase Shifter Design for C-Band Phased Array Applications

AU - Genc, Orkun Altay

AU - Gundel, Adnan

AU - Yelten, Mustafa Berke

PY - 2023

Y1 - 2023

N2 - In this paper, a 6-bit digital phase shifter design is introduced for C-band phased array applications, which presents a high performance in a wide bandwidth between 4 GHz and 6 GHz. The design is performed using the process design kit for 0.25 μm Gallium Arsenide pHEMT applications by WinSemi foundry. For each bit, the optimal design topology is selected and revised with enhancements so that the phase shifter attains a phase shift response, high input/output return loss, and low insertion loss characteristics in a comparatively compact form. The step size for the digital phase shifter is 5.625° with a phase error of 2.8125° in each bit design, tracking the whole 360°. The overall input and output return losses are greater than 10 dB, and the insertion loss of the component is lower than 5.8 dB over the 4-6 GHz bandwidth. This successful performance is achieved within a chip area of only 2200 μm to 2200 μm. Embedded switch all-pass networks and switched high-pass/low-pass network topologies are employed and controlled in parallel within the design. Each bit topology, along with the element values, is optimized and validated for the best performance.

AB - In this paper, a 6-bit digital phase shifter design is introduced for C-band phased array applications, which presents a high performance in a wide bandwidth between 4 GHz and 6 GHz. The design is performed using the process design kit for 0.25 μm Gallium Arsenide pHEMT applications by WinSemi foundry. For each bit, the optimal design topology is selected and revised with enhancements so that the phase shifter attains a phase shift response, high input/output return loss, and low insertion loss characteristics in a comparatively compact form. The step size for the digital phase shifter is 5.625° with a phase error of 2.8125° in each bit design, tracking the whole 360°. The overall input and output return losses are greater than 10 dB, and the insertion loss of the component is lower than 5.8 dB over the 4-6 GHz bandwidth. This successful performance is achieved within a chip area of only 2200 μm to 2200 μm. Embedded switch all-pass networks and switched high-pass/low-pass network topologies are employed and controlled in parallel within the design. Each bit topology, along with the element values, is optimized and validated for the best performance.

KW - 0.25 μm GaAs pHEMT

KW - 6-bit

KW - all-pass network

KW - c-band

KW - digital phase shifter

KW - phased-array

KW - switched high-pass/low-pass network

UR - http://www.scopus.com/inward/record.url?scp=85168655468&partnerID=8YFLogxK

U2 - 10.1109/SMACD58065.2023.10192146

DO - 10.1109/SMACD58065.2023.10192146

M3 - Conference contribution

AN - SCOPUS:85168655468

T3 - Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023

BT - Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023

Y2 - 3 July 2023 through 5 July 2023

ER -

Genc OA, Gundel A, Yelten MB. High-Performance Wideband 0.25 μm GaAs pHEMT 6-Bit Digital Phase Shifter Design for C-Band Phased Array Applications. In Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Proceedings - 2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods, and Applications to Circuit Design, SMACD 2023). doi: 10.1109/SMACD58065.2023.10192146

High-Performance Wideband 0.25 μm GaAs pHEMT 6-Bit Digital Phase Shifter Design for C-Band Phased Array Applications

Abstract

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Keywords

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