Abstract
The design and implementation of a high efficiency Class-J mode RF power amplifier (PA) for wireless communications applications is described here. In this study, a broadband class-J power amplifier with GaN HEMT transistor is designed to achieve 40 dBm output power and 10 dB gain, high efficiency and linearity performance in the 2.5-3.5 GHz frequency band. Experimental results indicate good agreement with simulations verifying and demonstrating the class-J mode operation. The obtained power added efficiency (PAE) is above 68% and the output power is 39.84 dBm at an input drive of 30 dBm. High efficiency is achieved in the frequency range from 2.5 GHz to 3.5 GHz. Simulation and experimental results show that the class-J RF power amplifier can be realized more effectively in terms of a better compromise between power and efficiency trade-offs over a significant RF bandwidth than conventional class-AB/B operations. the ACPR value for the linearity measurement was found to be around -30 dBc.
Original language | English |
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Title of host publication | 2018 18th Mediterranean Microwave Symposium, MMS 2018 |
Publisher | IEEE Computer Society |
Pages | 394-397 |
Number of pages | 4 |
ISBN (Electronic) | 9781538671320 |
DOIs | |
Publication status | Published - 2 Jul 2018 |
Externally published | Yes |
Event | 18th Mediterranean Microwave Symposium, MMS 2018 - Istanbul, Turkey Duration: 31 Oct 2018 → 2 Nov 2018 |
Publication series
Name | Mediterranean Microwave Symposium |
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Volume | 2018-October |
ISSN (Print) | 2157-9822 |
ISSN (Electronic) | 2157-9830 |
Conference
Conference | 18th Mediterranean Microwave Symposium, MMS 2018 |
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Country/Territory | Turkey |
City | Istanbul |
Period | 31/10/18 → 2/11/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
Keywords
- Class-J
- GaN (HEMT)
- broadband power amplifier
- high efficiency power amplifier