Hexagonal boron nitride as a cationic diffusion barrier to form a graded band gap perovskite heterostructure

Onur Ergen; Stephen Matthew Gilbert; Sally J. Turner; Alex Zettl

doi:10.1002/pssb.201600234

Hexagonal boron nitride as a cationic diffusion barrier to form a graded band gap perovskite heterostructure

Onur Ergen^*, Stephen Matthew Gilbert, Sally J. Turner, Alex Zettl

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH₃NH₃PbI_3−xBr_x on CH₃NH₃SnI₃ without cation mixing.

Original language	English
Pages (from-to)	2478-2480
Number of pages	3
Journal	Physica Status Solidi (B): Basic Research
Volume	253
Issue number	12
DOIs	https://doi.org/10.1002/pssb.201600234
Publication status	Published - 1 Dec 2016
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Funding

This research was supported in part by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy under contract no. DE-AC02-05CH11231, which provided for PL measurements under an LDRD award, and, within the sp

Funders	Funder number
Office of Basic Energy Sciences
National Science Foundation	1542741
U.S. Department of Energy	DE-AC02-05CH11231
Office of Science
Laboratory Directed Research and Development
Division of Materials Sciences and Engineering

Keywords

2D materials
cationic diffusion barrier
graded bandgap
hexagonal boron nitride (h-BN)
perovskites

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10.1002/pssb.201600234

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abstract = "We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3−xBrx on CH3NH3SnI3 without cation mixing.",

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AU - Ergen, Onur

AU - Gilbert, Stephen Matthew

AU - Turner, Sally J.

AU - Zettl, Alex

PY - 2016/12/1

Y1 - 2016/12/1

N2 - We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3−xBrx on CH3NH3SnI3 without cation mixing.

AB - We demonstrate a new technique to produce graded bandgap organohalide perovskite heterostructures using hexagonal boron nitride (h-BN) as a cationic separator. With this technique, we successfully deposit CH3NH3PbI3−xBrx on CH3NH3SnI3 without cation mixing.

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KW - cationic diffusion barrier

KW - graded bandgap

KW - hexagonal boron nitride (h-BN)

KW - perovskites

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ER -

Hexagonal boron nitride as a cationic diffusion barrier to form a graded band gap perovskite heterostructure

Abstract

Bibliographical note

Funding

Keywords

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