Growth and Characterization of Stoichiometric Cu₂ZnSnS₄ Crystal Using Vertical Bridgman Technique

Keyphrases

• Activation Energy 100%
• Vertical Bridgman Method 100%
• Acceptor Level 100%
• Kesterite Structure 100%
• Cu2ZnSnS4 100%
• Nearly Stoichiometric 100%
• Chemical Composition 50%
• Room Temperature 50%
• Temperature Effect 50%
• Structural Properties 50%
• Spectroscopic Measurement 50%
• Energy Dispersive X-ray Analysis 50%
• X-ray Diffraction Spectroscopy 50%
• Resistivity 50%
• Hall Effect Measurement 50%
• Monophase 50%
• Concentration of Measure 50%
• X-ray Raman Spectroscopy 50%
• Carrier Concentration 50%
• Hole Concentration 50%
• Antisite 50%
• Single Zone 50%
• Bridgman Method 50%
• Vertical Furnace 50%
• Cu-Zn 50%

Chemistry

• Reaction Activation Energy 100%
• Crystalline Material 100%
• Bridgman Technique 100%
• Acceptor Level 100%
• Ambient Reaction Temperature 50%
• Phase Composition 50%
• Hall Effect 50%
• X-Ray Diffraction 50%
• Energy-Dispersive X-Ray Spectroscopy 50%
• Energy-Dispersive Spectroscopy 50%
• Hole Concentration 50%
• formation 50%
• Raman Spectrometry 50%
• Raman Spectroscopy 50%

Material Science

• Crystalline Material 100%
• X-Ray Diffraction 50%
• Energy-Dispersive X-Ray Spectroscopy 50%
• Structural Property 50%
• Electrical Resistivity 50%
• Carrier Concentration 50%
• Raman Spectroscopy 50%
• Energy Dispersive X Ray Analysis 50%
• Hole Concentration 50%
• Phase Composition 50%