Abstract
This document presents a GaN-Based Class AB Power Amplifier design for 3.3-3.6 GHz frequency aiming for sub-6-GHz 5G transmitter systems. The design uses the Qorvo QPD1009 GaN on SiC HEMT RF transistor. GaN technology is selected after comparing different transistor processes because of its high breakdown voltage, high current density, and high thermal conductivity. Simulation results reveal a 20 dB linear gain, > 41 dBm output power, and > 55% power-added efficiency (PAE) at the 3-dB compression point. The measured small-signal gain is quite consistent with the simulation results. At the same time, the output power and the corresponding PAE are lower than the simulation outcomes, yielding an output power of ~38dBm and a PAE of ~41%.
| Original language | English |
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| Title of host publication | 2021 13th International Conference on Electrical and Electronics Engineering, ELECO 2021 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 90-93 |
| Number of pages | 4 |
| ISBN (Electronic) | 9786050114379 |
| DOIs | |
| Publication status | Published - 2021 |
| Event | 13th International Conference on Electrical and Electronics Engineering, ELECO 2021 - Virtual, Bursa, Turkey Duration: 25 Nov 2021 → 27 Nov 2021 |
Publication series
| Name | 2021 13th International Conference on Electrical and Electronics Engineering, ELECO 2021 |
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Conference
| Conference | 13th International Conference on Electrical and Electronics Engineering, ELECO 2021 |
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| Country/Territory | Turkey |
| City | Virtual, Bursa |
| Period | 25/11/21 → 27/11/21 |
Bibliographical note
Publisher Copyright:© 2021 Chamber of Turkish Electrical Engineers.
Keywords
- Class AB
- Gallium Nitride
- GaN
- HEMT
- Power Amplifier