First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT

Osman Ceylan; H. Bulent Yagci; Selcuk Paker

doi:10.1109/TELFOR48224.2019.8971140

First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT

Osman Ceylan
, H. Bulent Yagci
, Selcuk Paker

Department of Electronics and Communication Engineering

Maury Microwave Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

The phase and amplitude responses of a high power amplifier have a significant role in linearity performance. Analytical analysis of a high power solid-state device at linear and saturation regions can provide initial information about the overall performance before design and implementation. This study presents the analytical analysis of the amplitude and phase sensitivity of a GaN HEMT. The single-parameter and first-order analysis was considered to calculate sensitivity functions regarding the nonlinear components of the transistor. A simplified equivalent circuit model was used for the analysis. The analytic results were verified with a high power Class-AB amplifier at X-band while the maximum output power of 37 dBm at 8.2 GHz. The results show that the single-parameter and first-order sensitivity analysis can be used to evaluate the phase response of the amplifier to estimate the initial parameters before the final design and implementation of the amplifier.

Original language	English
Title of host publication	27th Telecommunications Forum, TELFOR 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728147895
DOIs	https://doi.org/10.1109/TELFOR48224.2019.8971140
Publication status	Published - Nov 2019
Event	27th Telecommunications Forum, TELFOR 2019 - Belgrade, Serbia Duration: 26 Nov 2019 → 27 Nov 2019

Publication series

Name	27th Telecommunications Forum, TELFOR 2019

Conference

Conference	27th Telecommunications Forum, TELFOR 2019
Country/Territory	Serbia
City	Belgrade
Period	26/11/19 → 27/11/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Funding

This study is supported by Istanbul Technical University (Grant Number 37348), and TUBITAK (The Scientific and Technological Research Council of Turkey), 2211/A and 2214/A programs.

Funders	Funder number
TUBITAK
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu	2211/A
Istanbul Teknik Üniversitesi	37348

Keywords

GaN HEMT
X-band
phase response
power amplifier
sensitivity

Access to Document

10.1109/TELFOR48224.2019.8971140

Cite this

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title = "First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT",

abstract = "The phase and amplitude responses of a high power amplifier have a significant role in linearity performance. Analytical analysis of a high power solid-state device at linear and saturation regions can provide initial information about the overall performance before design and implementation. This study presents the analytical analysis of the amplitude and phase sensitivity of a GaN HEMT. The single-parameter and first-order analysis was considered to calculate sensitivity functions regarding the nonlinear components of the transistor. A simplified equivalent circuit model was used for the analysis. The analytic results were verified with a high power Class-AB amplifier at X-band while the maximum output power of 37 dBm at 8.2 GHz. The results show that the single-parameter and first-order sensitivity analysis can be used to evaluate the phase response of the amplifier to estimate the initial parameters before the final design and implementation of the amplifier.",

keywords = "GaN HEMT, X-band, phase response, power amplifier, sensitivity",

author = "Osman Ceylan and Yagci, \{H. Bulent\} and Selcuk Paker",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 27th Telecommunications Forum, TELFOR 2019 ; Conference date: 26-11-2019 Through 27-11-2019",

year = "2019",

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doi = "10.1109/TELFOR48224.2019.8971140",

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Ceylan, O, Yagci, HB & Paker, S 2019, First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT. in 27th Telecommunications Forum, TELFOR 2019., 8971140, 27th Telecommunications Forum, TELFOR 2019, Institute of Electrical and Electronics Engineers Inc., 27th Telecommunications Forum, TELFOR 2019, Belgrade, Serbia, 26/11/19. https://doi.org/10.1109/TELFOR48224.2019.8971140

First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT. / Ceylan, Osman; Yagci, H. Bulent; Paker, Selcuk.
27th Telecommunications Forum, TELFOR 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8971140 (27th Telecommunications Forum, TELFOR 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT

AU - Ceylan, Osman

AU - Yagci, H. Bulent

AU - Paker, Selcuk

PY - 2019/11

Y1 - 2019/11

N2 - The phase and amplitude responses of a high power amplifier have a significant role in linearity performance. Analytical analysis of a high power solid-state device at linear and saturation regions can provide initial information about the overall performance before design and implementation. This study presents the analytical analysis of the amplitude and phase sensitivity of a GaN HEMT. The single-parameter and first-order analysis was considered to calculate sensitivity functions regarding the nonlinear components of the transistor. A simplified equivalent circuit model was used for the analysis. The analytic results were verified with a high power Class-AB amplifier at X-band while the maximum output power of 37 dBm at 8.2 GHz. The results show that the single-parameter and first-order sensitivity analysis can be used to evaluate the phase response of the amplifier to estimate the initial parameters before the final design and implementation of the amplifier.

AB - The phase and amplitude responses of a high power amplifier have a significant role in linearity performance. Analytical analysis of a high power solid-state device at linear and saturation regions can provide initial information about the overall performance before design and implementation. This study presents the analytical analysis of the amplitude and phase sensitivity of a GaN HEMT. The single-parameter and first-order analysis was considered to calculate sensitivity functions regarding the nonlinear components of the transistor. A simplified equivalent circuit model was used for the analysis. The analytic results were verified with a high power Class-AB amplifier at X-band while the maximum output power of 37 dBm at 8.2 GHz. The results show that the single-parameter and first-order sensitivity analysis can be used to evaluate the phase response of the amplifier to estimate the initial parameters before the final design and implementation of the amplifier.

KW - GaN HEMT

KW - X-band

KW - phase response

KW - power amplifier

KW - sensitivity

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U2 - 10.1109/TELFOR48224.2019.8971140

DO - 10.1109/TELFOR48224.2019.8971140

M3 - Conference contribution

AN - SCOPUS:85079318700

T3 - 27th Telecommunications Forum, TELFOR 2019

BT - 27th Telecommunications Forum, TELFOR 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 27th Telecommunications Forum, TELFOR 2019

Y2 - 26 November 2019 through 27 November 2019

ER -

First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT

Abstract

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Keywords

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