First-Order Single-Parameter Phase and Amplitude Sensitivity Analysis of GaN HEMT

Osman Ceylan, H. Bulent Yagci, Selcuk Paker

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

The phase and amplitude responses of a high power amplifier have a significant role in linearity performance. Analytical analysis of a high power solid-state device at linear and saturation regions can provide initial information about the overall performance before design and implementation. This study presents the analytical analysis of the amplitude and phase sensitivity of a GaN HEMT. The single-parameter and first-order analysis was considered to calculate sensitivity functions regarding the nonlinear components of the transistor. A simplified equivalent circuit model was used for the analysis. The analytic results were verified with a high power Class-AB amplifier at X-band while the maximum output power of 37 dBm at 8.2 GHz. The results show that the single-parameter and first-order sensitivity analysis can be used to evaluate the phase response of the amplifier to estimate the initial parameters before the final design and implementation of the amplifier.

Original languageEnglish
Title of host publication27th Telecommunications Forum, TELFOR 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728147895
DOIs
Publication statusPublished - Nov 2019
Event27th Telecommunications Forum, TELFOR 2019 - Belgrade, Serbia
Duration: 26 Nov 201927 Nov 2019

Publication series

Name27th Telecommunications Forum, TELFOR 2019

Conference

Conference27th Telecommunications Forum, TELFOR 2019
Country/TerritorySerbia
CityBelgrade
Period26/11/1927/11/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Funding

This study is supported by Istanbul Technical University (Grant Number 37348), and TUBITAK (The Scientific and Technological Research Council of Turkey), 2211/A and 2214/A programs.

FundersFunder number
TUBITAK
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu2211/A
Istanbul Teknik Üniversitesi37348

    Keywords

    • GaN HEMT
    • phase response
    • power amplifier
    • sensitivity
    • X-band

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