Faceting of ⟨010⟩ steps on Si(001) and Ge(001) surfaces

H. J.W. Zandvliet; O. Gurlu; R. Van Gastel; Bene Poelsema

doi:10.1103/PhysRevB.69.125311

Faceting of ⟨010⟩ steps on Si(001) and Ge(001) surfaces

H. J.W. Zandvliet, O. Gurlu, R. Van Gastel, Bene Poelsema

University of Twente

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We have used scanning tunneling microscopy to study the faceting of ⟨010⟩ oriented steps on Si(001) and Ge(001) surfaces. The ⟨010⟩ oriented steps on Si(001) tend to facet into local S_A and S_B step segments, whereas ⟨010⟩ oriented steps on Ge(001) meander along the mean ⟨010⟩ direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	69
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.69.125311
Publication status	Published - 12 Mar 2004
Externally published	Yes

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title = "Faceting of ⟨010⟩ steps on Si(001) and Ge(001) surfaces",

abstract = "We have used scanning tunneling microscopy to study the faceting of ⟨010⟩ oriented steps on Si(001) and Ge(001) surfaces. The ⟨010⟩ oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas ⟨010⟩ oriented steps on Ge(001) meander along the mean ⟨010⟩ direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.",

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AU - Zandvliet, H. J.W.

AU - Gurlu, O.

AU - Van Gastel, R.

AU - Poelsema, Bene

PY - 2004/3/12

Y1 - 2004/3/12

N2 - We have used scanning tunneling microscopy to study the faceting of ⟨010⟩ oriented steps on Si(001) and Ge(001) surfaces. The ⟨010⟩ oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas ⟨010⟩ oriented steps on Ge(001) meander along the mean ⟨010⟩ direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

AB - We have used scanning tunneling microscopy to study the faceting of ⟨010⟩ oriented steps on Si(001) and Ge(001) surfaces. The ⟨010⟩ oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas ⟨010⟩ oriented steps on Ge(001) meander along the mean ⟨010⟩ direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

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DO - 10.1103/PhysRevB.69.125311

M3 - Article

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VL - 69

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 12

ER -

Faceting of ⟨010⟩ steps on Si(001) and Ge(001) surfaces

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