Abstract
In this work, we present a hybrid indium nitride particle/polycrystalline silicon solar cell based on 230 nm size indium nitride particles (InN-Ps) obtained through laser ablation. The solar cell performance measurements indicate that there is an absolute 1.5% increase (Δη) in the overall solar cell efficiency due to the presence of InN-Ps. Within the spectral range 300-1100 nm, improvements of up to 8.26% are observed in the external quantum efficiency (EQE) and increases of up to 8.75% are observed in the internal quantum efficiency (IQE) values of the corresponding solar cell. The enhancement in power performance is due to the down-shifting properties of the InN-Ps. The electrical measurements are supplemented by TEM, Raman, UV/VIS and PL spectroscopy of the InN-Ps.
Original language | English |
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Article number | 105903 |
Journal | Journal of Optics (United Kingdom) |
Volume | 17 |
Issue number | 10 |
DOIs | |
Publication status | Published - 25 Aug 2015 |
Bibliographical note
Publisher Copyright:© 2015 IOP Publishing Ltd.
Keywords
- efficiency
- enhancement
- external quantum efficiency
- indium nitride
- internal quantum efficiency
- particles
- solar cell