Engineering nanoscale polarization at the SrTiO3/Ge interface

Tony Le; Onur Kurt; Jun Ouyang; Jianjun Wang; Long Qing Chen; Edward L. Lin; John G. Ekerdt; Yuhang Ren

doi:10.1016/j.scriptamat.2019.12.033

Engineering nanoscale polarization at the SrTiO₃/Ge interface

Tony Le, Onur Kurt, Jun Ouyang, Jianjun Wang^*, Long Qing Chen, Edward L. Lin, John G. Ekerdt, Yuhang Ren

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The ability to manipulate electric polarization at reduced dimension has recently generated intense research interests. Here, we report the engineering of interfacial ferroelectricity by the monolithic integration of a single crystalline SrTiO₃ (STO) film on a germanium Ge(001) substrate. A combination of nonlinear optical measurements, microstructural analyses, and phase-field simulations provide evidences of room-temperature ferroelectricity in the epitaxial STO ultrathin film. We show that the collective atomic displacements of Ti near the STO/Ge interface are responsible for the generation of an in-plane ferroelectric polarization. An a₁/a₂ domain pattern with a stable net polarization along the [110] in-plane direction is revealed.

Original language	English
Pages (from-to)	489-492
Number of pages	4
Journal	Scripta Materialia
Volume	178
DOIs	https://doi.org/10.1016/j.scriptamat.2019.12.033
Publication status	Published - 15 Mar 2020
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2019

Funding

This work was supported in part by the Air Force Office of Scientific Research (Grant Nos. FA9550-17-1-0339 and FA9550-17-1-0342 (TL, OK, JO, and YHR); Grant No. FA9550-18-1-0053 (ELL and JGE)), and the Army Research Office under grant number W911NF-17-1-0462 (JJW and LQC).

Funders	Funder number
Air Force Office of Scientific Research	FA9550-17-1-0342, FA9550-18-1-0053, FA9550-17-1-0339
Army Research Office	W911NF-17-1-0462

Keywords

Electric polarization
Interface ferroelectricity
Nanoelectronics
Phase field simulation
Second harmonics generation

Access to Document

10.1016/j.scriptamat.2019.12.033

Cite this

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title = "Engineering nanoscale polarization at the SrTiO3/Ge interface",

abstract = "The ability to manipulate electric polarization at reduced dimension has recently generated intense research interests. Here, we report the engineering of interfacial ferroelectricity by the monolithic integration of a single crystalline SrTiO3 (STO) film on a germanium Ge(001) substrate. A combination of nonlinear optical measurements, microstructural analyses, and phase-field simulations provide evidences of room-temperature ferroelectricity in the epitaxial STO ultrathin film. We show that the collective atomic displacements of Ti near the STO/Ge interface are responsible for the generation of an in-plane ferroelectric polarization. An a1/a2 domain pattern with a stable net polarization along the [110] in-plane direction is revealed.",

keywords = "Electric polarization, Interface ferroelectricity, Nanoelectronics, Phase field simulation, Second harmonics generation",

author = "Tony Le and Onur Kurt and Jun Ouyang and Jianjun Wang and Chen, \{Long Qing\} and Lin, \{Edward L.\} and Ekerdt, \{John G.\} and Yuhang Ren",

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T1 - Engineering nanoscale polarization at the SrTiO3/Ge interface

AU - Le, Tony

AU - Kurt, Onur

AU - Ouyang, Jun

AU - Wang, Jianjun

AU - Chen, Long Qing

AU - Lin, Edward L.

AU - Ekerdt, John G.

AU - Ren, Yuhang

PY - 2020/3/15

Y1 - 2020/3/15

N2 - The ability to manipulate electric polarization at reduced dimension has recently generated intense research interests. Here, we report the engineering of interfacial ferroelectricity by the monolithic integration of a single crystalline SrTiO3 (STO) film on a germanium Ge(001) substrate. A combination of nonlinear optical measurements, microstructural analyses, and phase-field simulations provide evidences of room-temperature ferroelectricity in the epitaxial STO ultrathin film. We show that the collective atomic displacements of Ti near the STO/Ge interface are responsible for the generation of an in-plane ferroelectric polarization. An a1/a2 domain pattern with a stable net polarization along the [110] in-plane direction is revealed.

AB - The ability to manipulate electric polarization at reduced dimension has recently generated intense research interests. Here, we report the engineering of interfacial ferroelectricity by the monolithic integration of a single crystalline SrTiO3 (STO) film on a germanium Ge(001) substrate. A combination of nonlinear optical measurements, microstructural analyses, and phase-field simulations provide evidences of room-temperature ferroelectricity in the epitaxial STO ultrathin film. We show that the collective atomic displacements of Ti near the STO/Ge interface are responsible for the generation of an in-plane ferroelectric polarization. An a1/a2 domain pattern with a stable net polarization along the [110] in-plane direction is revealed.

KW - Electric polarization

KW - Interface ferroelectricity

KW - Nanoelectronics

KW - Phase field simulation

KW - Second harmonics generation

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DO - 10.1016/j.scriptamat.2019.12.033

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