Engineering nanoscale polarization at the SrTiO3/Ge interface

Tony Le, Onur Kurt, Jun Ouyang, Jianjun Wang*, Long Qing Chen, Edward L. Lin, John G. Ekerdt, Yuhang Ren

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The ability to manipulate electric polarization at reduced dimension has recently generated intense research interests. Here, we report the engineering of interfacial ferroelectricity by the monolithic integration of a single crystalline SrTiO3 (STO) film on a germanium Ge(001) substrate. A combination of nonlinear optical measurements, microstructural analyses, and phase-field simulations provide evidences of room-temperature ferroelectricity in the epitaxial STO ultrathin film. We show that the collective atomic displacements of Ti near the STO/Ge interface are responsible for the generation of an in-plane ferroelectric polarization. An a1/a2 domain pattern with a stable net polarization along the [110] in-plane direction is revealed.

Original languageEnglish
Pages (from-to)489-492
Number of pages4
JournalScripta Materialia
Volume178
DOIs
Publication statusPublished - 15 Mar 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2019

Funding

This work was supported in part by the Air Force Office of Scientific Research (Grant Nos. FA9550-17-1-0339 and FA9550-17-1-0342 (TL, OK, JO, and YHR); Grant No. FA9550-18-1-0053 (ELL and JGE)), and the Army Research Office under grant number W911NF-17-1-0462 (JJW and LQC).

FundersFunder number
Air Force Office of Scientific ResearchFA9550-17-1-0342, FA9550-18-1-0053, FA9550-17-1-0339
Army Research OfficeW911NF-17-1-0462

    Keywords

    • Electric polarization
    • Interface ferroelectricity
    • Nanoelectronics
    • Phase field simulation
    • Second harmonics generation

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