Engineering nanoscale polarization at the SrTiO3/Ge interface

Tony Le, Onur Kurt, Jun Ouyang, Jianjun Wang*, Long Qing Chen, Edward L. Lin, John G. Ekerdt, Yuhang Ren

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


The ability to manipulate electric polarization at reduced dimension has recently generated intense research interests. Here, we report the engineering of interfacial ferroelectricity by the monolithic integration of a single crystalline SrTiO3 (STO) film on a germanium Ge(001) substrate. A combination of nonlinear optical measurements, microstructural analyses, and phase-field simulations provide evidences of room-temperature ferroelectricity in the epitaxial STO ultrathin film. We show that the collective atomic displacements of Ti near the STO/Ge interface are responsible for the generation of an in-plane ferroelectric polarization. An a1/a2 domain pattern with a stable net polarization along the [110] in-plane direction is revealed.

Original languageEnglish
Pages (from-to)489-492
Number of pages4
JournalScripta Materialia
Publication statusPublished - 15 Mar 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2019


This work was supported in part by the Air Force Office of Scientific Research (Grant Nos. FA9550-17-1-0339 and FA9550-17-1-0342 (TL, OK, JO, and YHR); Grant No. FA9550-18-1-0053 (ELL and JGE)), and the Army Research Office under grant number W911NF-17-1-0462 (JJW and LQC).

FundersFunder number
Air Force Office of Scientific ResearchFA9550-17-1-0342, FA9550-18-1-0053, FA9550-17-1-0339
Army Research OfficeW911NF-17-1-0462


    • Electric polarization
    • Interface ferroelectricity
    • Nanoelectronics
    • Phase field simulation
    • Second harmonics generation


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