Electronic properties of (2 × 1) and c(4 × 2) domains on Ge(001) studied by scanning tunneling spectroscopy

Oguzhan Gurlu; Harold J.W. Zandvliet; Bene Poelsema

doi:10.1103/PhysRevLett.93.066101

Electronic properties of (2 × 1) and c(4 × 2) domains on Ge(001) studied by scanning tunneling spectroscopy

Oguzhan Gurlu^*
, Harold J.W. Zandvliet
, Bene Poelsema

^*Corresponding author for this work

University of Twente

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

Scanning tunneling spectroscopy was used for investigating the surface electronic structure of (2 × 1) and c(4 × 2) domains on Ge(001). A UHV system with a constant base pressure was applied at room temperature for the investigations. The presence of a metallic state on the (2 × 1) domains, which was absent on the c(4 × 2) domains, was indicated by the measured surface densities of states. The flip-flop dimers that constituted the (2 × 1) domains was responsible for this metallic state which was observed only in integral measurements.

Original language	English
Article number	066101
Pages (from-to)	066101-1-066101-4
Journal	Physical Review Letters
Volume	93
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.93.066101
Publication status	Published - 6 Aug 2004
Externally published	Yes

Funding

This work is financially supported by Stichting Fundamental Onderzoek der Materie (FOM) of the Netherlands.

Funders
Stichting voor Fundamenteel Onderzoek der Materie

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10.1103/PhysRevLett.93.066101

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abstract = "Scanning tunneling spectroscopy was used for investigating the surface electronic structure of (2 × 1) and c(4 × 2) domains on Ge(001). A UHV system with a constant base pressure was applied at room temperature for the investigations. The presence of a metallic state on the (2 × 1) domains, which was absent on the c(4 × 2) domains, was indicated by the measured surface densities of states. The flip-flop dimers that constituted the (2 × 1) domains was responsible for this metallic state which was observed only in integral measurements.",

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AB - Scanning tunneling spectroscopy was used for investigating the surface electronic structure of (2 × 1) and c(4 × 2) domains on Ge(001). A UHV system with a constant base pressure was applied at room temperature for the investigations. The presence of a metallic state on the (2 × 1) domains, which was absent on the c(4 × 2) domains, was indicated by the measured surface densities of states. The flip-flop dimers that constituted the (2 × 1) domains was responsible for this metallic state which was observed only in integral measurements.

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ER -

Electronic properties of (2 × 1) and c(4 × 2) domains on Ge(001) studied by scanning tunneling spectroscopy

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