Electronic properties of (2 × 1) and c(4 × 2) domains on Ge(001) studied by scanning tunneling spectroscopy

Oguzhan Gurlu*, Harold J.W. Zandvliet, Bene Poelsema

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)

Abstract

Scanning tunneling spectroscopy was used for investigating the surface electronic structure of (2 × 1) and c(4 × 2) domains on Ge(001). A UHV system with a constant base pressure was applied at room temperature for the investigations. The presence of a metallic state on the (2 × 1) domains, which was absent on the c(4 × 2) domains, was indicated by the measured surface densities of states. The flip-flop dimers that constituted the (2 × 1) domains was responsible for this metallic state which was observed only in integral measurements.

Original languageEnglish
Article number066101
Pages (from-to)066101-1-066101-4
JournalPhysical Review Letters
Volume93
Issue number6
DOIs
Publication statusPublished - 6 Aug 2004
Externally publishedYes

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