Abstract
In this work, the MnO2-ZnO thin films with nominal molar ratios of 8%, 16% and 25% of Zn to Mn were deposited on glass and Indium Tin Oxide (ITO) substrates by dip-coating sol-gel method and annealed in air at 300 °C. The films were characterized by Cyclic Voltammetry measurement (CV), X-ray Diffraction spectroscopy (XRD), Atomic Force Microscopy (AFM), Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X-ray spectroscopy (EDX) and UV-Visible spectrophotometry. The XRD patterns indicated the amorphous structure for all samples. The CV measurements were performed in the potential window between - 2 V and 2 V at a potential scan rate of 20 mV/s and 50 mV/s. The results of CVs at a scan rate of 20 mV/s in the first cycle showed that the sample with 25% of Zn content with the maximum anodic and cathodic charge density has a better performance compared to other samples and the capacitance decreases with increasing cycle number of all samples at 50 mV/s. Optical constants and optical band gaps of thin films were investigated by transmission and reflection. The AFM images revealed that roughness increases with increasing Zn concentration. The FE-SEM images showed nearly similar morphology for all thin films.
Original language | English |
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Pages (from-to) | 1-9 |
Number of pages | 9 |
Journal | Journal of Non-Crystalline Solids |
Volume | 427 |
DOIs | |
Publication status | Published - 20 Jul 2015 |
Bibliographical note
Publisher Copyright:© 2015 Elsevier B.V. All rights reserved.
Keywords
- Electrochromic
- MnO-ZnO thin films
- Optical constants
- Sol-gel