Electrical characterization of the boron trifluoride doped poly(3-aminoacetophenone)/p-Si junction

Fahrettin Yakuphanoglu*, B. Filiz Şenkal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Electrical and interface state properties of the borontrifluoride doped poly(3-aminoacetophenone)/p-Si junction have been investigated by current-voltage and impedance spectroscopy methods. Al/p-Si/P 3APBF3/ Aldiode indicates a nonideal behavior with electrical parameters (n = 3.53, φB = 0.82 eV, and Rs = 1.48 kΩ), which result from the interfacial layer, series resistance, and resistance of the organic semiconductor. The obtained barrier height value of the Al/p-Si/ P3APBF3/Aldiode is higher than that of the conventional Al/p-Si (φB = 0.58 eV) Schottky diode. The interface state density of the diode was of the order of 1.05 × 10 12 eV-1 cm-2. It is evaluated that the barrier height and interface state density values of the diode are modified using the boron trifluoride doped poly (3-aminoacetophenone) organic semiconductor.

Original languageEnglish
Pages (from-to)929-935
Number of pages7
JournalPolymer Engineering and Science
Issue number5
Publication statusPublished - May 2010


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