Abstract
Electrical and interface state properties of the borontrifluoride doped poly(3-aminoacetophenone)/p-Si junction have been investigated by current-voltage and impedance spectroscopy methods. Al/p-Si/P 3APBF3/ Aldiode indicates a nonideal behavior with electrical parameters (n = 3.53, φB = 0.82 eV, and Rs = 1.48 kΩ), which result from the interfacial layer, series resistance, and resistance of the organic semiconductor. The obtained barrier height value of the Al/p-Si/ P3APBF3/Aldiode is higher than that of the conventional Al/p-Si (φB = 0.58 eV) Schottky diode. The interface state density of the diode was of the order of 1.05 × 10 12 eV-1 cm-2. It is evaluated that the barrier height and interface state density values of the diode are modified using the boron trifluoride doped poly (3-aminoacetophenone) organic semiconductor.
Original language | English |
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Pages (from-to) | 929-935 |
Number of pages | 7 |
Journal | Polymer Engineering and Science |
Volume | 50 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 2010 |