Effect of annealing temperature on ZnO:Al/p-Si heterojunctions

N. Baydogan; O. Karacasu; H. Cimenoglu

doi:10.1016/j.tsf.2012.04.044

Effect of annealing temperature on ZnO:Al/p-Si heterojunctions

N. Baydogan^*
, O. Karacasu
, H. Cimenoglu

^*Corresponding author for this work

Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Al-doped, zinc oxide (ZnO:Al) films with a 1.2 at.% Al concentration were deposited on p-type silicon wafers using a sol-gel dip coating technique to produce a ZnO:Al/p-Si heterojunction. Following deposition and subsequent drying processes, the films were annealed in vacuum at five different temperatures between 550 and 900°C for 1 h. The resistivity of the films decreased with increasing annealing temperature, and an annealing temperature of 700°C provided controlled current flow through the ZnO:Al/p-Si heterojunction up to 20 V. The ZnO:Al film deposited on a p-type silicon wafer with 1.2 at.% Al concentration was concluded to have the potential for use in electronic devices as a diode after annealing at 700°C.

Original language	English
Pages (from-to)	5790-5796
Number of pages	7
Journal	Thin Solid Films
Volume	520
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2012.04.044
Publication status	Published - 30 Jun 2012

Funding

This study is supported by TUBITAK , as a research project with a project number 107M545 .

Funders	Funder number
TUBITAK	107M545

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Aluminium
Annealing
Electrical properties
Heterojunctions
Sol-gel deposition
Zinc oxide

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10.1016/j.tsf.2012.04.044

Cite this

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title = "Effect of annealing temperature on ZnO:Al/p-Si heterojunctions",

abstract = "Al-doped, zinc oxide (ZnO:Al) films with a 1.2 at.\% Al concentration were deposited on p-type silicon wafers using a sol-gel dip coating technique to produce a ZnO:Al/p-Si heterojunction. Following deposition and subsequent drying processes, the films were annealed in vacuum at five different temperatures between 550 and 900°C for 1 h. The resistivity of the films decreased with increasing annealing temperature, and an annealing temperature of 700°C provided controlled current flow through the ZnO:Al/p-Si heterojunction up to 20 V. The ZnO:Al film deposited on a p-type silicon wafer with 1.2 at.\% Al concentration was concluded to have the potential for use in electronic devices as a diode after annealing at 700°C.",

keywords = "Aluminium, Annealing, Electrical properties, Heterojunctions, Sol-gel deposition, Zinc oxide",

author = "N. Baydogan and O. Karacasu and H. Cimenoglu",

year = "2012",

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doi = "10.1016/j.tsf.2012.04.044",

language = "English",

volume = "520",

pages = "5790--5796",

journal = "Thin Solid Films",

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}

TY - JOUR

T1 - Effect of annealing temperature on ZnO:Al/p-Si heterojunctions

AU - Baydogan, N.

AU - Karacasu, O.

AU - Cimenoglu, H.

PY - 2012/6/30

Y1 - 2012/6/30

N2 - Al-doped, zinc oxide (ZnO:Al) films with a 1.2 at.% Al concentration were deposited on p-type silicon wafers using a sol-gel dip coating technique to produce a ZnO:Al/p-Si heterojunction. Following deposition and subsequent drying processes, the films were annealed in vacuum at five different temperatures between 550 and 900°C for 1 h. The resistivity of the films decreased with increasing annealing temperature, and an annealing temperature of 700°C provided controlled current flow through the ZnO:Al/p-Si heterojunction up to 20 V. The ZnO:Al film deposited on a p-type silicon wafer with 1.2 at.% Al concentration was concluded to have the potential for use in electronic devices as a diode after annealing at 700°C.

AB - Al-doped, zinc oxide (ZnO:Al) films with a 1.2 at.% Al concentration were deposited on p-type silicon wafers using a sol-gel dip coating technique to produce a ZnO:Al/p-Si heterojunction. Following deposition and subsequent drying processes, the films were annealed in vacuum at five different temperatures between 550 and 900°C for 1 h. The resistivity of the films decreased with increasing annealing temperature, and an annealing temperature of 700°C provided controlled current flow through the ZnO:Al/p-Si heterojunction up to 20 V. The ZnO:Al film deposited on a p-type silicon wafer with 1.2 at.% Al concentration was concluded to have the potential for use in electronic devices as a diode after annealing at 700°C.

KW - Aluminium

KW - Annealing

KW - Electrical properties

KW - Heterojunctions

KW - Sol-gel deposition

KW - Zinc oxide

UR - https://www.scopus.com/pages/publications/84861831755

U2 - 10.1016/j.tsf.2012.04.044

DO - 10.1016/j.tsf.2012.04.044

M3 - Article

AN - SCOPUS:84861831755

SN - 0040-6090

VL - 520

SP - 5790

EP - 5796

JO - Thin Solid Films

JF - Thin Solid Films

IS - 17

ER -

Effect of annealing temperature on ZnO:Al/p-Si heterojunctions

Abstract

Funding

UN SDGs

Keywords

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