Abstract
Cu₂ZnSnSe₄ (CZTSe) is a promising low-cost and ecofriendly p-type semiconductor for solar cells. However, CZTSe solar cells are have shortcomings, as they typically involve hazardous CdS-buffer layers. Costly dopant elements Ag and/or Ge are also normally used. This study aims at producing efficient, ecofriendly and low-cost solar cells. The Cd-, Ag- and Ge-free configuration metal/MoSe2/CZTSe/ZnSe/i-ZnO/ZnO-Al/metal is proposed. CZTSe film is prepared by the facile and low-cost sol-gel method, and characterized by elemental analysis, optical-absorption spectra, surface morphology, surface profiling and wettability. The cell is simulated by SCAPS-1D. Optimal CZTSe-layer thickness is 2.5 μm with optimized doping concentration 5 × 1016 cm−3. With these parameters, the cell exhibits an open-circuit potential 0.56 V, a short-circuit potential 47.33 mA/cm2 and a fill factor 73.82 %. With a cell conversion efficiency 19.5 %, the proposed cell outperforms earlier CZTSe cells in terms of cost and environmental friendliness. This opens new research inroads toward improved CZTSe-based solar cells.
| Original language | English |
|---|---|
| Article number | 112952 |
| Journal | Chemical Physics |
| Volume | 601 |
| DOIs | |
| Publication status | Published - 1 Feb 2026 |
Bibliographical note
Publisher Copyright:© 2025 Elsevier B.V.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Absorber-layer thickness
- CZTSe films
- Doping concentration
- SCAPS-1D
- Sol-gel
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