Donor-acceptor pair recombination in AgIn5S8 single crystals

N. M. Gasanly, A. Serpengüzel, A. Aydinli*, O. Gürlü, I. Yilmaz

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)

Abstract

Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV al 10 K and an excitation intensity of 0.97 W cm-2. The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band.

Original languageEnglish
Pages (from-to)3198-3201
Number of pages4
JournalJournal of Applied Physics
Volume85
Issue number6
DOIs
Publication statusPublished - 15 Mar 1999
Externally publishedYes

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