Distributed wideband power amplifier using reactive coupled line feedback structure

Hamid Yadegar Amin; Serdar Özoǧuz; Ramazan Köprü; B. S. Yarman

doi:10.1109/KBEI.2015.7436027

Distributed wideband power amplifier using reactive coupled line feedback structure

Hamid Yadegar Amin, Serdar Özoǧuz, Ramazan Köprü, B. S. Yarman

Department of Electronics and Communication Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Citations (Scopus)

Abstract

A wideband and flat gain distributed power amplifier using a GaN high electron mobility (HEMT) transistor has been designed. The frequency range covers 700 MHz to 4.5 GHz. The small signal gain has the average value of 10 dB. A reactive distributed shunt feedback structure is introduced and implemented by means of microstrip coupled lines. Also, fully distributed input and output impedance matching networks are implemented. The design and simulations are accomplished by advanced design system tool (ADS). The design has undergone large signal, small signal and electromagnetic analysis (EM-simulation). At VDS = 28 V and IDS = 340 mA. Down to the output power back-off of 5 dB at 4.5 GHz, power performance obtained with PAE higher than 35% where the maximum output power is 40.4 dBm.

Original language	English
Title of host publication	Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	91-94
Number of pages	4
ISBN (Electronic)	9781467365062
DOIs	https://doi.org/10.1109/KBEI.2015.7436027
Publication status	Published - 17 Mar 2016
Event	2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015 - Tehran, Iran, Islamic Republic of Duration: 5 Nov 2015 → 6 Nov 2015

Publication series

Name	Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015

Conference

Conference	2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015
Country/Territory	Iran, Islamic Republic of
City	Tehran
Period	5/11/15 → 6/11/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

broadband power amplifier
co-simulation
coupled lines
lowpass matching networks
lumped to distributed conversion
nonlinear optimization
reactive shunt feedback

Access to Document

10.1109/KBEI.2015.7436027

Cite this

Amin, H. Y., Özoǧuz, S., Köprü, R., & Yarman, B. S. (2016). Distributed wideband power amplifier using reactive coupled line feedback structure. In Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015 (pp. 91-94). Article 7436027 (Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/KBEI.2015.7436027

Amin, Hamid Yadegar ; Özoǧuz, Serdar ; Köprü, Ramazan et al. / Distributed wideband power amplifier using reactive coupled line feedback structure. Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 91-94 (Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015).

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title = "Distributed wideband power amplifier using reactive coupled line feedback structure",

abstract = "A wideband and flat gain distributed power amplifier using a GaN high electron mobility (HEMT) transistor has been designed. The frequency range covers 700 MHz to 4.5 GHz. The small signal gain has the average value of 10 dB. A reactive distributed shunt feedback structure is introduced and implemented by means of microstrip coupled lines. Also, fully distributed input and output impedance matching networks are implemented. The design and simulations are accomplished by advanced design system tool (ADS). The design has undergone large signal, small signal and electromagnetic analysis (EM-simulation). At VDS = 28 V and IDS = 340 mA. Down to the output power back-off of 5 dB at 4.5 GHz, power performance obtained with PAE higher than 35% where the maximum output power is 40.4 dBm.",

keywords = "broadband power amplifier, co-simulation, coupled lines, lowpass matching networks, lumped to distributed conversion, nonlinear optimization, reactive shunt feedback",

author = "Amin, {Hamid Yadegar} and Serdar {\"O}zoǧuz and Ramazan K{\"o}pr{\"u} and Yarman, {B. S.}",

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doi = "10.1109/KBEI.2015.7436027",

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Amin, HY, Özoǧuz, S, Köprü, R & Yarman, BS 2016, Distributed wideband power amplifier using reactive coupled line feedback structure. in Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015., 7436027, Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015, Institute of Electrical and Electronics Engineers Inc., pp. 91-94, 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015, Tehran, Iran, Islamic Republic of, 5/11/15. https://doi.org/10.1109/KBEI.2015.7436027

Distributed wideband power amplifier using reactive coupled line feedback structure. / Amin, Hamid Yadegar; Özoǧuz, Serdar; Köprü, Ramazan et al.
Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 91-94 7436027 (Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Distributed wideband power amplifier using reactive coupled line feedback structure

AU - Amin, Hamid Yadegar

AU - Özoǧuz, Serdar

AU - Köprü, Ramazan

AU - Yarman, B. S.

PY - 2016/3/17

Y1 - 2016/3/17

N2 - A wideband and flat gain distributed power amplifier using a GaN high electron mobility (HEMT) transistor has been designed. The frequency range covers 700 MHz to 4.5 GHz. The small signal gain has the average value of 10 dB. A reactive distributed shunt feedback structure is introduced and implemented by means of microstrip coupled lines. Also, fully distributed input and output impedance matching networks are implemented. The design and simulations are accomplished by advanced design system tool (ADS). The design has undergone large signal, small signal and electromagnetic analysis (EM-simulation). At VDS = 28 V and IDS = 340 mA. Down to the output power back-off of 5 dB at 4.5 GHz, power performance obtained with PAE higher than 35% where the maximum output power is 40.4 dBm.

AB - A wideband and flat gain distributed power amplifier using a GaN high electron mobility (HEMT) transistor has been designed. The frequency range covers 700 MHz to 4.5 GHz. The small signal gain has the average value of 10 dB. A reactive distributed shunt feedback structure is introduced and implemented by means of microstrip coupled lines. Also, fully distributed input and output impedance matching networks are implemented. The design and simulations are accomplished by advanced design system tool (ADS). The design has undergone large signal, small signal and electromagnetic analysis (EM-simulation). At VDS = 28 V and IDS = 340 mA. Down to the output power back-off of 5 dB at 4.5 GHz, power performance obtained with PAE higher than 35% where the maximum output power is 40.4 dBm.

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KW - co-simulation

KW - coupled lines

KW - lowpass matching networks

KW - lumped to distributed conversion

KW - nonlinear optimization

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BT - Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015

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Y2 - 5 November 2015 through 6 November 2015

ER -

Amin HY, Özoǧuz S, Köprü R, Yarman BS. Distributed wideband power amplifier using reactive coupled line feedback structure. In Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 91-94. 7436027. (Conference Proceedings of 2015 2nd International Conference on Knowledge-Based Engineering and Innovation, KBEI 2015). doi: 10.1109/KBEI.2015.7436027

Distributed wideband power amplifier using reactive coupled line feedback structure

Abstract

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Bibliographical note

Keywords

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