Dielectric spectroscopy and nonequilibrium phase transitions in TlGaSe 2 layered crystals

Ferid Salehli; Yakup Baki; Mirhasan Yu Seyidov; Rauf A. Suleymanov

doi:10.1088/0268-1242/22/8/002

Dielectric spectroscopy and nonequilibrium phase transitions in TlGaSe ₂ layered crystals

Ferid Salehli^*, Yakup Baki, Mirhasan Yu Seyidov, Rauf A. Suleymanov

^*Corresponding author for this work

Faculty of Science and Letters

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The real and imaginary parts of the dielectric function of TlGaSe ₂ single crystals are investigated in the frequency range 30 Hz-13 MHz and at temperatures 80 K-300 K. A low frequency dispersion due to the interfacial polarization within the crystals is observed. The temperature dependence of relaxation time is obtained in a wide temperature region. A well- distinguished anomalous rise of relaxation time has been established in the 145 K-190 K temperature range for the first time far from the traditional phase transitions known in TlGaSe₂ crystals. It is shown that the observed behaviour of relaxation time is due to instabilities in the electronic subsystem revealing themselves as a non-equilibrium phase transition. A close relationship between the observed anomaly and anomalous behaviour of the various physical parameters of the investigated crystals is proposed.

Original language	English
Article number	002
Pages (from-to)	843-850
Number of pages	8
Journal	Semiconductor Science and Technology
Volume	22
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/22/8/002
Publication status	Published - 1 Aug 2007

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title = "Dielectric spectroscopy and nonequilibrium phase transitions in TlGaSe 2 layered crystals",

abstract = "The real and imaginary parts of the dielectric function of TlGaSe 2 single crystals are investigated in the frequency range 30 Hz-13 MHz and at temperatures 80 K-300 K. A low frequency dispersion due to the interfacial polarization within the crystals is observed. The temperature dependence of relaxation time is obtained in a wide temperature region. A well- distinguished anomalous rise of relaxation time has been established in the 145 K-190 K temperature range for the first time far from the traditional phase transitions known in TlGaSe2 crystals. It is shown that the observed behaviour of relaxation time is due to instabilities in the electronic subsystem revealing themselves as a non-equilibrium phase transition. A close relationship between the observed anomaly and anomalous behaviour of the various physical parameters of the investigated crystals is proposed.",

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T1 - Dielectric spectroscopy and nonequilibrium phase transitions in TlGaSe 2 layered crystals

AU - Salehli, Ferid

AU - Baki, Yakup

AU - Seyidov, Mirhasan Yu

AU - Suleymanov, Rauf A.

PY - 2007/8/1

Y1 - 2007/8/1

N2 - The real and imaginary parts of the dielectric function of TlGaSe 2 single crystals are investigated in the frequency range 30 Hz-13 MHz and at temperatures 80 K-300 K. A low frequency dispersion due to the interfacial polarization within the crystals is observed. The temperature dependence of relaxation time is obtained in a wide temperature region. A well- distinguished anomalous rise of relaxation time has been established in the 145 K-190 K temperature range for the first time far from the traditional phase transitions known in TlGaSe2 crystals. It is shown that the observed behaviour of relaxation time is due to instabilities in the electronic subsystem revealing themselves as a non-equilibrium phase transition. A close relationship between the observed anomaly and anomalous behaviour of the various physical parameters of the investigated crystals is proposed.

AB - The real and imaginary parts of the dielectric function of TlGaSe 2 single crystals are investigated in the frequency range 30 Hz-13 MHz and at temperatures 80 K-300 K. A low frequency dispersion due to the interfacial polarization within the crystals is observed. The temperature dependence of relaxation time is obtained in a wide temperature region. A well- distinguished anomalous rise of relaxation time has been established in the 145 K-190 K temperature range for the first time far from the traditional phase transitions known in TlGaSe2 crystals. It is shown that the observed behaviour of relaxation time is due to instabilities in the electronic subsystem revealing themselves as a non-equilibrium phase transition. A close relationship between the observed anomaly and anomalous behaviour of the various physical parameters of the investigated crystals is proposed.

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JO - Semiconductor Science and Technology

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Dielectric spectroscopy and nonequilibrium phase transitions in TlGaSe ₂ layered crystals

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