Abstract
The results of investigations low frequency dielectric relaxation in layered ferroelectric TlInS2 crystals are presented. The measurements were performed in the temperature range of 180-230 K and in the frequency range of 5 kHz-1 MHz. Two different relaxation processes were observed in mentioned temperature interval. The crystal has "slow" and "fast" relaxation mechanisms in low and high frequency region, respectively. The presence of two different relaxation mechanisms in TlInS2 is discussed.
Original language | English |
---|---|
Pages (from-to) | 626-630 |
Number of pages | 5 |
Journal | Crystal Research and Technology |
Volume | 42 |
Issue number | 6 |
DOIs | |
Publication status | Published - Jun 2007 |
Keywords
- Chaotic state
- Dielectric constant
- Layered system
- Relaxation