Dielectric relaxation in ferroelectric TlInS2 layered crystals within metastable chaotic state

E. Şentürk*, L. Tümbek, F. A. Mikailov, F. Salehli

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The results of investigations low frequency dielectric relaxation in layered ferroelectric TlInS2 crystals are presented. The measurements were performed in the temperature range of 180-230 K and in the frequency range of 5 kHz-1 MHz. Two different relaxation processes were observed in mentioned temperature interval. The crystal has "slow" and "fast" relaxation mechanisms in low and high frequency region, respectively. The presence of two different relaxation mechanisms in TlInS2 is discussed.

Original languageEnglish
Pages (from-to)626-630
Number of pages5
JournalCrystal Research and Technology
Volume42
Issue number6
DOIs
Publication statusPublished - Jun 2007

Keywords

  • Chaotic state
  • Dielectric constant
  • Layered system
  • Relaxation

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