Dielectric properties of sol-gel derived Ta2O5 thin films

S. Yildirim, K. Ulutas*, D. Deger, E. O. Zayim, I. Turhan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

The dielectric constant and the dielectric loss of tantalum pentoxide (Ta2O5) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-105 Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed.

Original languageEnglish
Pages (from-to)329-335
Number of pages7
JournalVacuum
Volume77
Issue number3
DOIs
Publication statusPublished - 18 Feb 2005

Keywords

  • Dielectric constant
  • Dielectric loss and relaxation
  • Sol-gel
  • TaO
  • Thin films

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