Dielectric properties of sol-gel derived Ta2O5 thin films

S. Yildirim; K. Ulutas; D. Deger; E. O. Zayim; I. Turhan

doi:10.1016/j.vacuum.2004.12.002

Dielectric properties of sol-gel derived Ta₂O₅ thin films

S. Yildirim, K. Ulutas^*, D. Deger, E. O. Zayim, I. Turhan

^*Corresponding author for this work

Department of Physics Engineering

Istanbul University

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

The dielectric constant and the dielectric loss of tantalum pentoxide (Ta₂O₅) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-10⁵ Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed.

Original language	English
Pages (from-to)	329-335
Number of pages	7
Journal	Vacuum
Volume	77
Issue number	3
DOIs	https://doi.org/10.1016/j.vacuum.2004.12.002
Publication status	Published - 18 Feb 2005

Keywords

Dielectric constant
Dielectric loss and relaxation
Sol-gel
TaO
Thin films

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10.1016/j.vacuum.2004.12.002

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title = "Dielectric properties of sol-gel derived Ta2O5 thin films",

abstract = "The dielectric constant and the dielectric loss of tantalum pentoxide (Ta2O5) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-105 Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed.",

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AU - Yildirim, S.

AU - Ulutas, K.

AU - Deger, D.

AU - Zayim, E. O.

AU - Turhan, I.

PY - 2005/2/18

Y1 - 2005/2/18

N2 - The dielectric constant and the dielectric loss of tantalum pentoxide (Ta2O5) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-105 Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed.

AB - The dielectric constant and the dielectric loss of tantalum pentoxide (Ta2O5) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-105 Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed.

KW - Dielectric constant

KW - Dielectric loss and relaxation

KW - Sol-gel

KW - TaO

KW - Thin films

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DO - 10.1016/j.vacuum.2004.12.002

M3 - Article

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SN - 0042-207X

VL - 77

SP - 329

EP - 335

JO - Vacuum

JF - Vacuum

IS - 3

ER -

Dielectric properties of sol-gel derived Ta₂O₅ thin films

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Keywords

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