Dielectric, conduction and interface properties of Au/Pc/p-Si Schottky barrier diode

Keyphrases

• Dielectric Properties 100%
• Interface Properties 100%
• P-silicon 100%
• Conduction Mechanism 100%
• Schottky Barrier Diode 100%
• Conduction Properties 100%
• Temperature Effect 66%
• Metal-insulator-semiconductor Structures 66%
• Zinc Phthalocyanine 33%
• AC Conductivity 33%
• Low Frequency Region 33%
• Dielectric Constant 33%
• Frequency Dependence 33%
• Frequency Region 33%
• Conductance 33%
• Intermediate Frequency 33%
• Binuclear 33%
• Fixed Frequency 33%
• Capacitance-voltage 33%
• Quantum Tunneling 33%
• Interface States 33%
• Hopping Conduction 33%
• Capacitance Measurement 33%
• Silicon Surface 33%
• Free Band 33%
• Conductance-voltage 33%
• Band Conduction 33%
• AC Conduction 33%
• Metal Conductivity 33%
• Metal-insulator-metal Capacitor 33%
• Passivated 33%
• Fabricated Metal 33%
• High-frequency Capacitance 33%
• High-low Frequency 33%
• Clamshell 33%

Material Science

• Interface Property 100%
• Schottky Barrier 100%
• Semiconductor Structure 100%
• Dielectric Material 100%
• Capacitor 50%
• Permittivity 50%
• Capacitance 50%
• Dielectric Property 50%
• Capacitance Measurement 50%

Engineering

• Dielectrics 100%
• Schottky Barrier Diode 100%
• Frequency Region 66%
• Semiconductor Structure 66%
• Temperature Dependence 33%
• Intermediate Frequency 33%
• Silicon Surface 33%
• Interface State 33%
• Metal-Insulator-Semiconductor Capacitor 33%
• Tunnel Construction 33%
• Capacitance Measurement 33%
• Conduction Band 33%