Determination optimum ni concentration in Zn2SnO4/Ni-Doped Sb2S3 thin films with different ni concentrations using incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements

S. Nar, O. Sahin, S. Horoz*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

In this present study, Ni-doped Sb2S3 thin films with different Ni concentrations were synthesized on Zn2SnO4 coated with FTO conductive glasses by CBD method at room temperature using Ni as the dopant material. The concentration of Ni to be doped during the experiment was determined as 0.25%, 0.5%, 0.75%, and 1%. In the first stage of this study, incident photons to current efficiency (IPCE) and current density (J)-voltage (V) measurements were conducted to investigate the photovoltaic properties of Zn2SnO4 /Ni-doped Sb2S3 thin films with different Ni concentrations for the first time. The main reason for performing IPCE and J-V measurements is to determine Ni-doped Sb2S3 thin film with optimum Ni concentration with the best solar cell performance. It was found that Sb2S3: Ni(0.75%) thin film has the highest IPCE (%) and power conversion efficiency values compare to other Ni concentrations.

Original languageEnglish
Pages (from-to)491-497
Number of pages7
JournalChalcogenide Letters
Volume15
Issue number10
Publication statusPublished - Oct 2018
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2018, S.C. Virtual Company of Phisics S.R.L. All rights reserved.

Funding

This study supported by the Scientific and Technological Research Council of Turkey. (TUBITAK) (Project number: 117F193).

FundersFunder number
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu117F193

    Keywords

    • Characterization
    • Doping
    • Photovoltaic
    • Synthesis
    • Thin film

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