TY - JOUR
T1 - Designing ZrO2-blended nanocomposite MIM capacitors for future OFET applications and their characterizations
AU - Tavasli, Aybuke
AU - Majewski, Leszek A.
AU - Uddin, M. Afsar
AU - Gómez-Lor, Berta
AU - Trabzon, Levent
AU - Faraji, Sheida
N1 - Publisher Copyright:
© 2024 Elsevier Ltd
PY - 2025/3/15
Y1 - 2025/3/15
N2 - Organic field-effect transistors (OFETs) have been exploited as sensors for a variety of applications due to their excellent advantages over diodes and other electronic devices. Capacitors are one of the key components of the OFET designs that consist of a dielectric layer sandwiched between two parallel metal plates. The dielectric layer should be thin and/or have a high k constant value to achieve a high capacitance value (Ci, areal capacitance), so more charge carriers can be accumulated at the interface between the dielectric and the organic semiconductor, for OFETs to operate under low voltage (< 3 V). In this study, high-k nanocomposites (NCs) of ZrO2 metal oxide ceramic nanoparticles (NPs) in varying concentrations blended in two different polymer matrixes, poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) and cyanoethyl cellulose (CEC) have been utilised as the dielectric layer in metal-insulator-metal (MIM) capacitors. The physical and electrical properties of fabricated MIM capacitors were evaluated. The measured areal capacitance, Ci, values demonstrated a gradual rise with increasing ZrO2 metal oxide content in both polymer matrixes. ZrO2-PVDF-HFP-based capacitors exhibited a two-fold increase in Ci, 91.86 ± 6.1 nF/cm2 (a 140 % increase) for 10 wt % NP content. Similarly, areal capacitance values of 76 ± 3.03 nF/cm2 (a 45 % rise) was measured on MIMs using CZ10 dielectric layer. High average dielectric constant (k) values of 28.61 and 35.68 for CZ5 and PZ5, respectively) were obtained. As expected, leakage current density increased for higher NP % in polymer matrixes. Nevertheless, all MIMs yielded average leakage current density < 1.75 × 10−6 (A/cm2) at 2 V. Therefore, the reported nanocomposites are suitable dielectric layers for OFETs and as platforms for gas, chemical and photoactivated sensing devices.
AB - Organic field-effect transistors (OFETs) have been exploited as sensors for a variety of applications due to their excellent advantages over diodes and other electronic devices. Capacitors are one of the key components of the OFET designs that consist of a dielectric layer sandwiched between two parallel metal plates. The dielectric layer should be thin and/or have a high k constant value to achieve a high capacitance value (Ci, areal capacitance), so more charge carriers can be accumulated at the interface between the dielectric and the organic semiconductor, for OFETs to operate under low voltage (< 3 V). In this study, high-k nanocomposites (NCs) of ZrO2 metal oxide ceramic nanoparticles (NPs) in varying concentrations blended in two different polymer matrixes, poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) and cyanoethyl cellulose (CEC) have been utilised as the dielectric layer in metal-insulator-metal (MIM) capacitors. The physical and electrical properties of fabricated MIM capacitors were evaluated. The measured areal capacitance, Ci, values demonstrated a gradual rise with increasing ZrO2 metal oxide content in both polymer matrixes. ZrO2-PVDF-HFP-based capacitors exhibited a two-fold increase in Ci, 91.86 ± 6.1 nF/cm2 (a 140 % increase) for 10 wt % NP content. Similarly, areal capacitance values of 76 ± 3.03 nF/cm2 (a 45 % rise) was measured on MIMs using CZ10 dielectric layer. High average dielectric constant (k) values of 28.61 and 35.68 for CZ5 and PZ5, respectively) were obtained. As expected, leakage current density increased for higher NP % in polymer matrixes. Nevertheless, all MIMs yielded average leakage current density < 1.75 × 10−6 (A/cm2) at 2 V. Therefore, the reported nanocomposites are suitable dielectric layers for OFETs and as platforms for gas, chemical and photoactivated sensing devices.
KW - Metal oxide dielectric
KW - MIM capacitors
KW - Nanocomposite dielectric
KW - Nanoparticle ceramics
KW - Organic field-effect transistor
KW - Solution-processed
KW - Zirconium oxide
UR - http://www.scopus.com/inward/record.url?scp=85210388971&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2024.109180
DO - 10.1016/j.mssp.2024.109180
M3 - Article
AN - SCOPUS:85210388971
SN - 1369-8001
VL - 188
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 109180
ER -