Design of Cryogenic LNAs for High Linearity in Space Applications

Alican Çaǧlar; Mustafa Berke Yelten

doi:10.1109/TCSI.2019.2936506

Design of Cryogenic LNAs for High Linearity in Space Applications

Alican Çaǧlar, Mustafa Berke Yelten^*

^*Corresponding author for this work

Department of Electronics and Communication Engineering

Istanbul Technical University

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

This paper presents a 2 GHz low noise amplifier (LNA) implemented in 180 nm complementary metal oxide semiconductor (CMOS) technology designed for cryogenic temperatures as well as its measurement results at both room temperature and 77 K. A modified approach to classical LNA design has been adopted. The matching of the LNA has been performed by external discrete components such that S11 and S22 of the LNA between 2.025 and 2.12 GHz (designated for space communications) are below -10 dB at both 77 K and 297 K. At 77 K, the designed LNA achieves 18 dB gain, 35.4 K noise temperature, and +3 dBm IIP3. IIP3 performance of the LNA at cryogenic temperatures has been analyzed in particular, and the linearity improvement by using the proposed approach has been demonstrated. Moreover, the designed LNA was irradiated with 650 krad gamma radiation. Even though the LNA is not specifically radiation-hardened, no degradation on its performance has been observed.

Original language	English
Article number	8844972
Pages (from-to)	4619-4627
Number of pages	9
Journal	IEEE Transactions on Circuits and Systems I: Regular Papers
Volume	66
Issue number	12
DOIs	https://doi.org/10.1109/TCSI.2019.2936506
Publication status	Published - Dec 2019

Bibliographical note

Publisher Copyright:
© 2004-2012 IEEE.

Funding

Manuscript received February 1, 2019; revised June 17, 2019 and July 19, 2019; accepted August 15, 2019. Date of publication September 19, 2019; date of current version December 6, 2019. This work was supported in part by the Technological Research Council of Turkey under Project TÜB˙TAK 1001 215E080 and in part by the Department of Scientific Research Projects, Istanbul Technical University, under Project 39465. This article was recommended by Associate Editor E. Bonizzoni. (Corresponding author: Mustafa Berke Yelten.) The authors are with the Department of Electronics and Communications Engineering, Istanbul Technical University, 34467 Istanbul, Turkey (e-mail: [email protected]; [email protected]).

Funders	Funder number
Technological Research Council of Turkey	TÜB˙TAK 1001 215E080
Istanbul Teknik Üniversitesi	39465

Keywords

complementary metal oxide semiconductor (CMOS)
cryogenics
gamma radiation
linearity
Low noise amplifier (LNA)
noise figure
total ionizing dose

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10.1109/TCSI.2019.2936506

Cite this

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title = "Design of Cryogenic LNAs for High Linearity in Space Applications",

abstract = "This paper presents a 2 GHz low noise amplifier (LNA) implemented in 180 nm complementary metal oxide semiconductor (CMOS) technology designed for cryogenic temperatures as well as its measurement results at both room temperature and 77 K. A modified approach to classical LNA design has been adopted. The matching of the LNA has been performed by external discrete components such that S11 and S22 of the LNA between 2.025 and 2.12 GHz (designated for space communications) are below -10 dB at both 77 K and 297 K. At 77 K, the designed LNA achieves 18 dB gain, 35.4 K noise temperature, and +3 dBm IIP3. IIP3 performance of the LNA at cryogenic temperatures has been analyzed in particular, and the linearity improvement by using the proposed approach has been demonstrated. Moreover, the designed LNA was irradiated with 650 krad gamma radiation. Even though the LNA is not specifically radiation-hardened, no degradation on its performance has been observed.",

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KW - noise figure

KW - total ionizing dose

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Design of Cryogenic LNAs for High Linearity in Space Applications

Abstract

Bibliographical note

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Keywords

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