Design of 1.5-6 GHz High Efficiency 50W Power Amplifier Design for sub 6-GHz 5G Systems

Engin Çaǧdas*, Oǧuzhan Kizilbey, Metin Yazgi, Osman Palamutçuoǧullari

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents the design of a Gallium Nitride (GaN) transistor based power amplifier (PA) with 50W (47 dBm) output power operating in the 1.5-6 GHz frequency range for 5G base stations. In this study, to avoid a gain-bandwidth trade-off by using a single 50W transistor, two 25W transistors are used and combined at the output. A wideband (1.5-6 GHz) 2-way Wilkinson power divider/combiner is designed to drive the 25W transistors by dividing the input power in half and combining the 25W power at the output. Cree CGHV1F025S model GaN transistor and Rogers RT5870 model substrate are used in the design. The performance of the designed 25W PA is evaluated by simulations. According to the simulation results, the 25W PA offers 9.5 dB power gain, 43.6 dBm output power and power added efficiency (PAE) between 42% and 55% in the 1.5-6 GHz band. By combining the output of two 25W PAs with the designed 2-way WPD, an output power of 46.3-47.1 dBm is obtained across the band.

Original languageEnglish
Title of host publicationICECS 2023 - 2023 30th IEEE International Conference on Electronics, Circuits and Systems
Subtitle of host publicationTechnosapiens for Saving Humanity
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350326499
DOIs
Publication statusPublished - 2023
Event30th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2023 - Istanbul, Turkey
Duration: 4 Dec 20237 Dec 2023

Publication series

NameICECS 2023 - 2023 30th IEEE International Conference on Electronics, Circuits and Systems: Technosapiens for Saving Humanity

Conference

Conference30th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2023
Country/TerritoryTurkey
CityIstanbul
Period4/12/237/12/23

Bibliographical note

Publisher Copyright:
© 2023 IEEE.

Keywords

  • GaN (HEMT)
  • wideband high power high efficiency power amplifier
  • Wilkinson power divider/combiner

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