Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity

N. M. Gasanly; A. Serpengüzel; O. Gürlü; A. Aydinli; I. Yilmaz

doi:10.1016/S0038-1098(98)00396-2

Dependence of the photoluminescence of Tl₂InGaS₄ layered crystal on temperature and excitation intensity

N. M. Gasanly^*, A. Serpengüzel, O. Gürlü, A. Aydinli, I. Yilmaz

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The emission band spectra of Tl₂InGaS₄ layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model.

Original language	English
Pages (from-to)	525-530
Number of pages	6
Journal	Solid State Communications
Volume	108
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1098(98)00396-2
Publication status	Published - 20 Oct 1998
Externally published	Yes

Keywords

A. semiconductors
D. optical properties
E. luminescence

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10.1016/S0038-1098(98)00396-2

Cite this

@article{eec1f5035985490caa3f8a14c05736ce,

title = "Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity",

abstract = "The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model.",

keywords = "A. semiconductors, D. optical properties, E. luminescence",

author = "Gasanly, {N. M.} and A. Serpeng{\"u}zel and O. G{\"u}rl{\"u} and A. Aydinli and I. Yilmaz",

year = "1998",

month = oct,

day = "20",

doi = "10.1016/S0038-1098(98)00396-2",

language = "English",

volume = "108",

pages = "525--530",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "8",

}

TY - JOUR

T1 - Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity

AU - Gasanly, N. M.

AU - Serpengüzel, A.

AU - Gürlü, O.

AU - Aydinli, A.

AU - Yilmaz, I.

PY - 1998/10/20

Y1 - 1998/10/20

N2 - The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model.

AB - The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is explained using the configuration coordinate model. The blue shift of the emission band peak energy and the sublinear increase of the emission band intensity with increasing excitation intensity is explained using the inhomogenously spaced donor-acceptor pair recombination model.

KW - A. semiconductors

KW - D. optical properties

KW - E. luminescence

UR - http://www.scopus.com/inward/record.url?scp=0032179887&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(98)00396-2

DO - 10.1016/S0038-1098(98)00396-2

M3 - Article

AN - SCOPUS:0032179887

SN - 0038-1098

VL - 108

SP - 525

EP - 530

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Dependence of the photoluminescence of Tl₂InGaS₄ layered crystal on temperature and excitation intensity

Abstract

Keywords

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