Cyanoethyl cellulose-based nanocomposite dielectric for low-voltage, solution-processed organic field-effect transistors (OFETs)

Sheida Faraji, Ehsan Danesh, Daniel J. Tate, Michael L. Turner, Leszek A. Majewski

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)

Abstract

Low voltage organic field-effect transistors (OFETs) using solution-processed cyanoethyl cellulose (CEC) and CEC-based nanocomposites as the gate dielectric are demonstrated. Barium strontium titanate (BST) nanoparticles are homogeneously dispersed in CEC to form the high-k (18.0 ± 0.2 at 1 kHz) nanocomposite insulator layer. The optimised p-channel DPPTTT OFETs with BST-CEC nanocomposite as the gate dielectric operate with minimal hysteresis, display field-effect mobilities in excess of 1 cm2 V-1 s-1 at 3 V, possess low subthreshold swings (132 ± 8 mV dec-1), and have on/off ratios greater than 103. Addition of a 40-50 nm layer of cross-linked poly(vinyl phenol) (PVP) on the surface of the nanocomposite layer significantly decreases the gate leakage current (<10-7 A cm-2 at ±3 V) and the threshold voltage (< -0.7 V) enabling operation of the OFETs at 1.5 V. The presented bilayer BST-CEC/PVP dielectrics are a promising alternative for the fabrication of low voltage, solution-processed OFETs that are suitable for use in low power, portable electronics.

Original languageEnglish
Article number185102
JournalJournal Physics D: Applied Physics
Volume49
Issue number18
DOIs
Publication statusPublished - 5 Apr 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2016 IOP Publishing Ltd.

Keywords

  • high-k polymer nanocomposite
  • low voltage operation
  • organic-field-effect transistor (OFET)
  • polymer semiconductor

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