Current-voltage and capacitance-voltage characteristics of Al/p-type silicon/organic semiconductor based on phthalocyanine rectifier contact

F. Yakuphanoglu*, M. Kandaz, B. F. Senkal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)

Abstract

Electrical characteristics of the Al/p-type silicon/2,9,16,23-tetrakis-{6-(-thiophene-2-carboxylate)-hexylthio}phthalocyaninato cobalt(II) organic semiconductor contact have been investigated by current-voltage and capacitance-voltage measurements. The ideality factor (1.33), barrier height (0.90 eV) and series resistance (314.5 kΩ) of the Al/p-Si/CoPc contact were obtained from current-voltage characteristics. The barrier height obtained for the Al/p-Si/CoPc diode is significantly higher than that of obtained for the conventional Al/p-Si Schottky diode. The CoPc organic layer modifies the effective barrier height of Al/p-Si Schottky diode as the organic film forms a physical barrier between Al metal and the p-Si. The interface-state density of the diode was determined and interface-state density was found to vary from 1.23 × 1014 eV- 1 cm- 2 to 0.69 × 1014 eV- 1 cm- 2. It is evaluated that the CoPc organic layer modifies electrical parameters and interface properties of Al/p-Si junction.

Original languageEnglish
Pages (from-to)8793-8796
Number of pages4
JournalThin Solid Films
Volume516
Issue number23
DOIs
Publication statusPublished - 1 Oct 2008

Funding

This work was supported by the Turkish Scientific and Technological Research Council of TURKEY (TUBITAK) (Project No. 105T137) and T.R. Authors are thankful to The Scientific and Technological Research Council of Turkey.

FundersFunder number
TUBITAK105T137
Turkish Scientific and Technological Research Council of TURKEY
Türkiye Bilimsel ve Teknolojik Araştirma Kurumu

    Keywords

    • Interface-state density
    • Metal-organic-inorganic semiconductor contacts
    • Organic semiconductor
    • Phthalocyanine

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