Abstract
Electrical characteristics of the Al/p-type silicon/2,9,16,23-tetrakis-{6-(-thiophene-2-carboxylate)-hexylthio}phthalocyaninato cobalt(II) organic semiconductor contact have been investigated by current-voltage and capacitance-voltage measurements. The ideality factor (1.33), barrier height (0.90 eV) and series resistance (314.5 kΩ) of the Al/p-Si/CoPc contact were obtained from current-voltage characteristics. The barrier height obtained for the Al/p-Si/CoPc diode is significantly higher than that of obtained for the conventional Al/p-Si Schottky diode. The CoPc organic layer modifies the effective barrier height of Al/p-Si Schottky diode as the organic film forms a physical barrier between Al metal and the p-Si. The interface-state density of the diode was determined and interface-state density was found to vary from 1.23 × 1014 eV- 1 cm- 2 to 0.69 × 1014 eV- 1 cm- 2. It is evaluated that the CoPc organic layer modifies electrical parameters and interface properties of Al/p-Si junction.
| Original language | English |
|---|---|
| Pages (from-to) | 8793-8796 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 516 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 1 Oct 2008 |
Funding
This work was supported by the Turkish Scientific and Technological Research Council of TURKEY (TUBITAK) (Project No. 105T137) and T.R. Authors are thankful to The Scientific and Technological Research Council of Turkey.
| Funders | Funder number |
|---|---|
| TUBITAK | 105T137 |
| Turkish Scientific and Technological Research Council of TURKEY | |
| Türkiye Bilimsel ve Teknolojik Araştirma Kurumu |
Keywords
- Interface-state density
- Metal-organic-inorganic semiconductor contacts
- Organic semiconductor
- Phthalocyanine
