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Copper-Epoxy Interface Engineering for High-Frequency Chip-to-Chip Interconnects

  • Junghyun Park
  • , Ignace Agbadan
  • , Monsuru Dauda
  • , Mustapha Bello
  • , John Hendershot
  • , Soundarzo Tasnim
  • , Omotolani Oduyebo
  • , Sunggook Park
  • , Anthony Engler
  • , Jaimal Williamson
  • , Varughese Mathew
  • , Cigdem Atalay-Oral
  • , John Flake*
  • *Corresponding author for this work
  • Louisiana State University
  • Louisiana State University
  • Texas Instruments
  • NXP Semiconductors

Research output: Contribution to journalArticlepeer-review

Abstract

Highlights The Cu-epoxy interface performance is studied over 1500 temperature cycles. The temperature stability of organic and metal interlayers is studied for Cu-epoxy. Organic adhesion promoters, such as silane and azole, improve initial adhesion. Electroless CoW0.66P0.17 interface enhances adhesion due to its stable oxides. The CoW0.66P0.17 shows stability with a 0.02 dB mm−1 S21 change after 1500 cycles.

Original languageEnglish
Article number111004
JournalECS Journal of Solid State Science and Technology
Volume14
Issue number11
DOIs
Publication statusPublished - 1 Nov 2025
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2025 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.

Keywords

  • Chip-to-chip (C2C) interconnect
  • cladding
  • coupling agent
  • metal interlayer
  • multichip package
  • oxidation
  • polymer-metal adhesion

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