Controlling defect state emission in ultra-small sized tellurium doped CdSe nanocrystals via two-phase synthesis method

Caner Ünlü

doi:10.1016/j.optmat.2019.01.050

Controlling defect state emission in ultra-small sized tellurium doped CdSe nanocrystals via two-phase synthesis method

Caner Ünlü

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The utilization of semiconductor nanocrystals as white light emission source draws intense attention since semiconductor nanocrystals are promising candidates to fabricate new generation light emitting diodes. However, to synthesize high quality white light emitting semiconductor nanocrystals under mild reaction conditions at single step is a challenge. Here, we synthesized tellurium doped cadmium selenide (Te-doped CdSe) nanocrystals by using two phase synthesis method under mild reaction conditions at single step. Random localization of tellurium atoms in cadmium selenide nanocrystals caused emergence of defect state emission. The defect state emission was controlled by tuning initial Te:Se molar ratio in aqueous phase of the two phase system. Luminescence behaviour of Te-doped CdSe nanocrystals was affected by defect state emission and therefore, dual light emission (composition of blue-green light, whitish color) was observed. The Te-doped CdSe had cubic structure with Te composition at most 10% with size ranging around 1.8 nm. The CRI 1931 coordinates of the Te-doped CdSe nanocrystals revealed that Te-doped CdSe nanocrystals can be a powerful constituent for new generation light emitting diodes.

Original language	English
Pages (from-to)	361-367
Number of pages	7
Journal	Optical Materials
Volume	89
DOIs	https://doi.org/10.1016/j.optmat.2019.01.050
Publication status	Published - Mar 2019

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.

Funding

I thank Dr. Ahmet Gül for helpful discussion, support and letting use of UV-VIS spectrometer. I also thank Dr. Bünyamin Karagöz and his laboratory crew for support and letting use of Fluorescence Spectrometer. I would like to thank Dr. İsmail Koyuncu and Mehmet Emin Paşaoğlu for the EDX measurements and data analysis. The EDX measurements and data analysis were performed in MEM-TEK (National Membrane Technologies Research and Development Center). I would like to thank Dr. Levent Trabzon and Amir Navidfar for XRD measurements and data analysis. The XRD measurements and data analysis were performed in ITUNano (Istanbul Technical University Nanotechnology Research Center) This work was supported by Istanbul Technical University – Scientific Research Projects Unit (ITU-BAP) [Grant number: TAB-2017-40529].

Funders	Funder number
Istanbul Teknik Üniversitesi	2017-40529

Keywords

Cadmium chalcegonide nanocrystals
Quantum dots
Semiconductor nanocrystals

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10.1016/j.optmat.2019.01.050

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title = "Controlling defect state emission in ultra-small sized tellurium doped CdSe nanocrystals via two-phase synthesis method",

abstract = "The utilization of semiconductor nanocrystals as white light emission source draws intense attention since semiconductor nanocrystals are promising candidates to fabricate new generation light emitting diodes. However, to synthesize high quality white light emitting semiconductor nanocrystals under mild reaction conditions at single step is a challenge. Here, we synthesized tellurium doped cadmium selenide (Te-doped CdSe) nanocrystals by using two phase synthesis method under mild reaction conditions at single step. Random localization of tellurium atoms in cadmium selenide nanocrystals caused emergence of defect state emission. The defect state emission was controlled by tuning initial Te:Se molar ratio in aqueous phase of the two phase system. Luminescence behaviour of Te-doped CdSe nanocrystals was affected by defect state emission and therefore, dual light emission (composition of blue-green light, whitish color) was observed. The Te-doped CdSe had cubic structure with Te composition at most 10% with size ranging around 1.8 nm. The CRI 1931 coordinates of the Te-doped CdSe nanocrystals revealed that Te-doped CdSe nanocrystals can be a powerful constituent for new generation light emitting diodes.",

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author = "Caner {\"U}nl{\"u}",

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year = "2019",

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AU - Ünlü, Caner

PY - 2019/3

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N2 - The utilization of semiconductor nanocrystals as white light emission source draws intense attention since semiconductor nanocrystals are promising candidates to fabricate new generation light emitting diodes. However, to synthesize high quality white light emitting semiconductor nanocrystals under mild reaction conditions at single step is a challenge. Here, we synthesized tellurium doped cadmium selenide (Te-doped CdSe) nanocrystals by using two phase synthesis method under mild reaction conditions at single step. Random localization of tellurium atoms in cadmium selenide nanocrystals caused emergence of defect state emission. The defect state emission was controlled by tuning initial Te:Se molar ratio in aqueous phase of the two phase system. Luminescence behaviour of Te-doped CdSe nanocrystals was affected by defect state emission and therefore, dual light emission (composition of blue-green light, whitish color) was observed. The Te-doped CdSe had cubic structure with Te composition at most 10% with size ranging around 1.8 nm. The CRI 1931 coordinates of the Te-doped CdSe nanocrystals revealed that Te-doped CdSe nanocrystals can be a powerful constituent for new generation light emitting diodes.

AB - The utilization of semiconductor nanocrystals as white light emission source draws intense attention since semiconductor nanocrystals are promising candidates to fabricate new generation light emitting diodes. However, to synthesize high quality white light emitting semiconductor nanocrystals under mild reaction conditions at single step is a challenge. Here, we synthesized tellurium doped cadmium selenide (Te-doped CdSe) nanocrystals by using two phase synthesis method under mild reaction conditions at single step. Random localization of tellurium atoms in cadmium selenide nanocrystals caused emergence of defect state emission. The defect state emission was controlled by tuning initial Te:Se molar ratio in aqueous phase of the two phase system. Luminescence behaviour of Te-doped CdSe nanocrystals was affected by defect state emission and therefore, dual light emission (composition of blue-green light, whitish color) was observed. The Te-doped CdSe had cubic structure with Te composition at most 10% with size ranging around 1.8 nm. The CRI 1931 coordinates of the Te-doped CdSe nanocrystals revealed that Te-doped CdSe nanocrystals can be a powerful constituent for new generation light emitting diodes.

KW - Cadmium chalcegonide nanocrystals

KW - Quantum dots

KW - Semiconductor nanocrystals

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JO - Optical Materials

JF - Optical Materials

ER -

Controlling defect state emission in ultra-small sized tellurium doped CdSe nanocrystals via two-phase synthesis method

Abstract

Bibliographical note

Funding

Keywords

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